F-34
01/99
NJ132L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise Amplifier
G
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
+150°C
– 65°C to +175°C
Operating Junction Temperature, Tj
Storage Temperature, Ts
S-D
G
Devices in this Databook based on the NJ132L Process.
S-D
Datasheet
2N6451, 2N6452
2N6453, 2N6454
IF1320
IFN152
2SK152
Die Size = 0.022" X 0.022"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
NJ132L Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
– 15
– 25
– 50
V
nA
mA
V
I = – 1 µA, V = ØV
(BR)GSS
G
DS
I
– 100
100
V
= – 10V, V = ØV
GSS
GS
DS
I
5
V
= 10V, V = ØV
DSS
DS
GS
V
– 0.5
– 7
V
= 10V, I = 1 nA
GS(OFF)
DS
D
Dynamic Electrical Characteristics
(pulsed)
g
g
15
mS
mS
pF
V
= 10V, V = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
DS
GS
fs
Forward Transconductance
15
15
3.5
1
V
= 10V, I = 5 mA
DS
D
fs
Input Capacitance
C
V
= 10V, V = ØV
iss
DS
GS
Feedback Capacitance
Equivalent Noise Voltage
C
pF
V
= ØV, V = – 10V
iss
DS
GS
e¯
nV/√HZ V = 4V, I = 5 mA
DS D
N
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