F-2
01/99
NJ01 Process
Silicon Junction Field-Effect Transistor
¥ Low-Current
¥ Low Gate Leakage Current
¥ High Input Impedance
G
Absolute maximum ratings at TA = 25¡C
S-D
G
Gate Current, Ig
10 mA
+150°C
– 65°C to +175°C
Operating Junction Temperature, Tj
Storage Temperature, Ts
S-D
Devices in this Databook based on the NJ01 Process.
Datasheet
Datasheet
DPAD1, DPAD2
DPAD5, DPAD10
PAD1, PAD2
PAD5
2N4117, 2N4117A
2N4118, 2N4118A
2N4119, 2N4119A
IFN421, IFN422
IFN423, IFN424
IFN425, IFN426
Die Size = 0.016" X 0.016"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
VCR7N
At 25°C free air temperature:
Static Electrical Characteristics
NJ01 Process
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
V
– 40
– 50
V
pA
V
I = – 1 µA, V = ØV
(BR)GSS
G
DS
I
– 0.5
– 10
– 6
V
= – 20V, V = ØV
GSS
GS
DS
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
– 0.5
0.03
V
= 10V, I = 1 µA
GS(OFF)
DS
D
I
0.6
mA
V
= 10V, V = ØV
DSS
DS
GS
Dynamic Electrical Characteristics
Common Source Forward Transconductance
Common Source Input Capacitance
g
175
2
µS
pF
pF
V
= 10V, V = ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
DS
GS
fs
C
V
= 10V, V = ØV
iss
DS
GS
Common Source Reverse Transfer Capacitance C
rss
0.9
V
= 10V, V = ØV
DS
GS
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