PD - 9.1337C
IRL3103
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 30V
RDS(on) = 0.014Ω
G
l Fully Avalanche Rated
ID = 64A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowestpossibleon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levelstoapproximately50watts. Thelowthermalresistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
64
45
A
220
PD @TC = 25°C
Power Dissipation
110
W
W/°C
V
Linear Derating Factor
0.71
±16
VGS
EAS
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
240
mJ
IAR
34
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
11
mJ
5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
Units
RθJC
RθCS
RθJA
1.4
––––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
8/25/97
INTERFET [ INTERFET CORPORATION ]
