B-48
01/99
IFN6449, IFN6450
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ High Voltage
A
IFN6449
– 100 V
– 300 V
10 mA
IFN6450
– 100 V
– 200 V
10 mA
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
800 mW
800 mW
6.4 mW/°C 6.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
IFN6449
IFN6450
Process NJ42
Test Conditions
I = – 10 µA, I = ØA
Min Max Min Max Unit
Gate Drain Breakdown Voltage
Gate Source Breakdown Voltage
V
– 300
– 100
– 200
– 100
V
V
(BR)GDO
G
S
V
I = – 10 µA, I = ØA
(BR)GSO
G
D
– 100 nA
– 100 µA
V
= – 80V, V = ØV
GS
DS
Gate Reverse Current
I
GSS
V
= – 80V, V = ØV
T = 150°C
GS
DS
A
Gate Source Cutoff Voltage
V
– 2 – 15 – 2 – 15
V
V
= 30V, I = 4 nA
GS(OFF)
DS
D
Drain Saturation Current (Pulsed)
I
2
10
2
10
mA
V
= 30V, V = ØV
DSS
DS
GS
Dynamic Electrical Characteristics
Common Source Forward
Transfer Transmittance
| Y |
0.5
3
0.5
3
mS
V
= 30V, V = ØV
f = 1 kHz
fs
DS
GS
Common Source Output Conductance
Common Source Input Capacitance
g
100
10
100 µS
V
= 30V, V = ØV
f = 1 kHz
f = 1 MHz
os
DS
GS
C
10
pF
V
= 30V, V = ØV
iss
DS
GS
Common Source
Reverse Transfer Capacitance
C
5
5
pF
V
= 30V, V = ØV
f = 1 MHz
rss
DS
GS
TOÐ39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
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