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IFN422 参数 Datasheet PDF下载

IFN422图片预览
型号: IFN422
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78]
分类和应用: 放大器晶体管
文件页数/大小: 1 页 / 65 K
品牌: INTERFET [ INTERFET CORPORATION ]
   
01/99  
B-41  
IFN421, IFN422, IFN423  
Dual N-Channel Silicon Junction Field-Effect Transistor  
Absolute maximum ratings at T = 25¡C  
¥ Very High Input Impedance  
Differential Amplifiers  
¥ Electrometers  
A
Device Dissipation (Derate 3.2 mW/°C to 50°C)  
400 mW  
750 mW  
– 65°C to 200°C  
Total Device Dissipation (Derate 6 mW/°C to 150°C)  
Storage Temperature Range  
At 25°C free air temperature:  
Static Electrical Characteristics  
IFN421, IFN422, IFN423  
Process NJ01  
Test Conditions  
I = – 1 µA, V = ØV  
Min  
Typ  
Max  
Unit  
Gate Source Breakdown Voltage  
Gate to Gate Breakdown Voltage  
V
– 40  
±40  
– 60  
V
V
(BR)GSS  
G
DS  
BV  
I = – 1 µA, I = ØA, I = ØA  
G D S  
G1G2  
– 1  
– 1  
pA  
nA  
pA  
pA  
V
V
= – 20V, V = ØV  
GS  
DS  
Gate Reverse Current  
Gate Operating Current  
I
GSS  
V
= – 20V, V = ØV  
T = +125°C  
GS  
DS  
A
– 0.25  
– 250  
– 2  
V
= 10V, I = 30 µA  
DS  
D
I
G
V
= 10V, I = 30 µA  
T = +125°C  
DS  
D
A
Gate Source Cutoff Voltage  
Gate Source Voltage  
V
– 0.4  
60  
V
= 10V, I = 1 nA  
GS(OFF)  
DS  
D
V
– 1.8  
1000  
V
V
= 10V, I = 30 µA  
GS  
DS  
D
Drain Saturation Current (Pulsed)  
I
µA  
V
= 10V, V = Ø V  
DSS  
DS  
GS  
Dynamic Electrical Characteristics  
Common Source Forward Transconductance g  
100  
1500  
3
µS  
µS  
V
= 10V, V = Ø V  
f = 1 kHz  
f = 1 kHz  
f = 1 MHz  
f = 1 MHz  
f = 10 Hz  
fs  
DS  
GS  
Common Source Output Conductance  
Common Source Input Capacitance  
Common Source Reverse Transfer Capacitance  
Equivalent Circuit Input Noise Voltage  
g
V
= 10V, I = 30 µA  
os  
DS  
D
C
3
pF  
V
= 10V, V = Ø V  
iss  
DS  
GS  
C
1.5  
70  
pF  
V
= 10V, V = Ø V  
rss  
DS  
GS  
e¯  
20  
nV/Hz  
V
= 10V, I = 30 µA  
DS  
D
N
V
= 10V, I = 30 µA  
DS  
D
Noise Figure  
NF  
1
dB  
f = 10 Hz  
R = 10 M  
G
Max - IFN421 IFN422 IFN423  
Differential Gate Source Voltage  
|V – V  
|
10  
15  
25  
mV  
V
= 10V, I = 30 µA  
GS1 GS2  
DG  
D
T = – 55°C  
A
Differential Gate Source Voltage  
With Temperature  
|V – V  
|
GS1 GS2  
10  
25  
40  
µV/°C  
V
= 10V, I = 30 µA  
T = 25°C  
DG  
D
B
T  
T = 125°C  
C
Min - IFN421 IFN422 IFN423  
CMRR 90 80 80  
Common Mode Rejection Ratio  
dB  
V
= 10V to 20V, I = 30 µA  
DG  
D
TOÐ78 Package  
See Section G for Outline Dimensions  
Pin Configuration  
1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case,  
5 Source 2, 6 Drain 2, 7 Gate 2,  
8 Omitted  
1000 N. Shiloh Road, Garland, TX 75042  
(972) 487-1287 FAX (972) 276-3375  
www.interfet.com