01/99
B-33
IF1801
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings = T at 25¡C
¥ Low-Noise, High Gain Amplifier
A
Reverse Gate Source Voltage & Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 20 V
10 mA
300 mW
2 mW/°C
Storage Temperature Range
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
IF1801
Process NJ1800DL
Test Conditions
Min
Max
Unit
Gate Source Breakdown Voltage
V
– 20
V
I = – 1 µA, V = ØV
G DS
(BR)GSS
Gate Reverse Current
I
– 0.1
nA
V
V
= – 10V, V = ØV
GSS
GS DS
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
– 0.35 – 2
30
V
= 10V, I = 0.5 nA
GS(OFF)
DS D
I
mA
V
= 10V, V = ØV
DSS
DS GS
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
g
50
mS
V
= 10V, I = 5 mA
f = 1 kHz
fs
DS
D
Common Source Input Capacitance
C
100
50
pF
pF
V
= 10V, I = 5 mA
f = 1 MHz
f = 1 MHz
iss
DS
D
Common Source
Reverse Transfer Capacitance
C
V
= 10V, I = 5 mA
rss
DS D
Typ
Equivalent Short Circuit
Input Noise Voltage
e¯
0.5
nV/√Hz
V
= 4V, I = 5 mA
f = 1 kHz
N
DG
D
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com