01/99
B-29
IF142
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Low-Noise, High Gain Amplifier
A
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 20 V
10 mA
375 mW
3 mW/°C
Storage Temperature Range
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
IF142
Process NJ14AL
Test Conditions
Min
Max
Unit
Gate Source Breakdown Voltage
Gate Reverse Current
V
– 25
V
I = – 1 µA, V = ØV
G DS
(BR)GSS
– 0.1
nA
V
= – 15V, V = ØV
GS DS
I
GSS
– 0.2
– 6
– 5
1
nA
V
V
= – 15V, V = ØV
T = 150°C
GS
DS
A
Gate Source Cutoff Voltage
Gate Source Voltage
V
V
= 15V, I = 5 nA
GS(OFF)
DS D
V
V
V
= 15V, I = 50 µA
GS
DS D
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
V
V
V
= Ø, I = 1 mA
GS(F)
DS G
I
5
15
mA
V
= 15V, V = ØV
DSS
DS GS
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
Y
3.5
mS
µS
V
= 15V, V = ØV
f = 1 kHz
f = 1 kHz
fs
DS
GS
Common Source
Output Conductance
Y
0.05
V
= 15V, V = ØV
os
DS GS
Common Source Input Capacitance
C
3
pF
pF
V
= 15V, V = ØV
f = 1 MHz
f = 1 MHz
iss
DS
GS
Common Source
Reverse Transfer Capacitance
C
0.6
V
= 15V, V = ØV
rss
DS GS
Typ
Equivalent Short Circuit
Input Noise Voltage
e¯
4
nV/√Hz
V
= 12V, V = ØV
f = 10 Hz
N
DS
GS
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
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