01/99
B-31
IF1330
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Low-Noise, High Gain Amplifier
A
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 20 V
10 mA
225 mW
1.8 mW/°C
– 65°C to 200°C
Storage Temperature Range
At 25°C free air temperature:
Static Electrical Characteristics
IF1330
Process NJ132H
Test Conditions
Min
Max
Unit
Gate Source Breakdown Voltage
V
– 20
V
I = – 1 µA, V = ØV
G DS
(BR)GSS
Gate Reverse Current
I
– 0.1
nA
V
V
= ØV, V = – 10V
GSS
DS GS
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
– 0.35 – 1.5
V
= 10V, I = 0.5 nA
GS(OFF)
DS D
I
5
20
mA
V
= 10V, V = ØV
DSS
DS GS
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
g
10
mS
V
= 10V, I = 5 mA
f = 1 kHz
fs
DS
D
Common Source Input Capacitance
C
20
5
pF
pF
V
= 10V, I = 5 mA
f = 1 MHz
f = 1 MHz
iss
DS
D
Common Source
Reverse Transfer Capacitance
C
V
= 10V, I = 5 mA
rss
DS D
Typ
Equivalent Short Circuit
Input Noise Voltage
e¯
2.5
nV/√Hz
V
= 10V, I = 5 mA
f = 1 kHz
N
DS
D
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
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