Preliminary Data Sheet PD-20610 11/98
HF51A060ACE
Hexfred Die in Wafer Form
600 V
Size 51
5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
Test Conditions
TJ = 25°C, IF = 10.0A
VFM
Forward Voltage
1.2V Max.
600V Min.
25µA Max.
BVR
Reverse Breakdown Voltage
Reverse Leakage Current
TJ = 25°C, IR = 200µA
TJ = 25°C, VR = 600V
IRM
Mechanical Data
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Cr-Ni-Ag ( 1kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.340" x 0.195"
Wafer Diameter
125mm, with std. < 100 > flat
.015" ± .003"
Wafer Thickness
Relevant Die Mechanical Dwg. Number
MinimumStreetWidth
01-5312
100 Microns
Reject Ink Dot Size
0.25mmDiameterMinimum
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Storage Environment
Reference Standard IR packaged part ( for design ) : IRG4PSC71KD
Die Outline
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )
2. CONTROLLING DIMENSION : ( INCH )
3. DIMENSIONALTOLERANCES:
BONDING PADS : <0.635TOLERANCE=± 0.013
WIDTH
&
<(.0250)TOLERANCE=± (.0005)
>0.635TOLERANCE=± 0.025
>(.0250)TOLERANCE=± (.0010)
< 1.270TOLRANCE=± 0.102
< (.050) TOLERANCE = ± (.004)
>1.270 TOLERANCE=± 0.203
> (.050) TOLERANCE = ± (.008)
LENGTH
OVERALLDIE
WIDTH
&
LENGTH
INTERFET [ INTERFET CORPORATION ]