B-26
01/99
2N6453, 2N6454
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Audio Amplifiers
¥ Low-Noise, High Gain
Amplifiers
A
2N6453
– 20 V
– 20 V
10 mA
360 mW
2N6454
– 25 V
– 25 V
10 mA
360 mW
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
¥ Low-Noise Preamplifiers
2.88 mW/°C 2.88 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
2N6453
2N6454
Process NJ132L
Test Conditions
Min Max Min Max Unit
Gate Source Breakdown Voltage
V
– 20
– 25
V
nA
I = – 1 µA, V = ØV
G DS
(BR)GSS
– 0.1
– 0.2
V
= – 10V, V = ØV
GS
DS
– 0.5 nA
µA
V
= – 15V, V = ØV
GS
DS
Gate Reverse Current
I
GSS
V
= – 10V, V = ØV
T = 125°C
GS
DS
A
– 1
– 0.75 – 5 – 0.75 – 5
µA
V
V
= – 15V, V = ØV
T = 125°C
GS
DS
A
Gate Source Cutoff Voltage
V
V
= 10V, I = 0.5 nA
GS(OFF)
DS
D
Drain Saturation Current (Pulsed)
I
15
50
15
50
mA
V
= 10V, V = ØV
DSS
DS
GS
Dynamic Electrical Characteristics
mS
mS
µS
V
= 10V, I = 5 mA
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 10 kHz
f = 1 kHz
Common Source
Forward Transmittance
DS
D
| Y |
fs
20
40
100
25
20
40
V
= 10V, I = 15 mA
DS
D
V
= 10V, I = 5 mA
Common Source
Output Conductance
DS
D
| Y |
os
100 µS
pF
V
= 10V, I = 15 mA
DS
D
V
= 10V, I = 5 mA
Common Source
Input Capacitance
DS
D
C
iss
25
pF
pF
pF
V
= 10V, I = 15 mA
DS
D
V
= 10V, I = 5 mA
Common Source Reverse
Transfer Capacitance
DS
D
C
rss
5
5
3
5
V
= 10V, I = 15 mA
DS
D
10 nV/√Hz
V
= 10V, I = 5 mA
Equivalent Short Circuit
Input Noise Voltage
DS
D
e¯
N
8
nV/√Hz
V
= 10V, I = 5 mA
DS
D
I = 5 mA
= 10V,
D
V
DS
Noise Figure
NF
1.5
2.5
dB
f = 10 Hz
R = 10 kΩ
G
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]