01/99
B-17
2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Audio Amplifiers
A
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
– 40 V
50 mA
Continuous Device Power Dissipation
Power Derating
300mW
1.7 mW/°C
Storage Temperature Range
– 65°C to + 200°C
2N4867
2N4867A
2N4868
2N4868A
2N4869
2N4869A
Process NJ16
At 25°C free air temperature:
Static Electrical Characteristics
Min Max Min Max Min Max Unit
Test Conditions
Gate Source Breakdown Voltage
V
– 40
– 40
– 40
V
– 0.25 nA
– 0.25 µA
I = – 1µA, V = ØV
G DS
(BR)GSS
– 0.25
– 0.25
– 0.25
– 0.25
V
= – 30V, V = ØV
DS
GS
Gate Reverse Current
I
GSS
V
= – 30V, V = ØV
DS
T = 150°C
A
GS
Gate Source Cutoff Voltage
V
– 0.7 – 2
0.4 1.2
– 1
1
– 3 – 1.8 – 5
2.5 7.5
V
V
= 20V, I = 1 µA
DS D
GS(OFF)
Drain Saturation Current (Pulsed)
I
3
mA
V
= 20V, V = ØV
DSS
DS GS
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
g
g
700 2000 1000 3000 1300 4000 µS
V
= 20V, V = ØV
f = 1 kHz
fs
DS GS
Common Source Output Conductance
Common Source Input Capacitance
1.5
25
4
10
25
µS
pF
V
= 20V, V = ØV
f = 1 kHz
f = 1 MHz
os
DS GS
C
25
V
= 20V, V = ØV
iss
DS GS
Common Source Reverse
Transfer Capacitance
C
5
5
5
pF
V
= 20V, V = ØV
f = 1 MHz
rss
DS GS
20
10
20
10
20 nV/√HZ
10 nV/√HZ
V
= 10V, V = ØV
GS
f = 10 Hz
f = 1 kHz
f = 1 kHz
Equivalent Short Circuit
Input Noise Voltage
DS
e¯
N
V
= 10V, V = ØV
GS
DS
V
= 10V, V = ØV
GS
DS
Noise Figure
NF
1
1
1
dB
(2N4867, 68, 69) R = 20 kΩ
G
(2N4867A, 68A, 69A) R = 5 kΩ
G
TOÐ72 Package
Surface Mount
SMP4867, SMP4867A, SMP4868,
SMP4868A, SMP4869, SMP4869A
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
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