B-14
01/99
2N4416, 2N4416A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
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A
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
2N4416
– 30 V
10 mA
300 mW
2 mW°C
2N4416A
– 35 V
10 mA
300 mW
2 mW/°C
Continuous Device Dissipation
Power Derating
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
2N4416
2N4416A
Process NJ26
Min Max Min Max Unit
Test Conditions
V
– 30
– 35
V
– 0.1 nA
– 0.1 µA
I = – 1µA, V = ØV
G DS
(BR)GSS
– 0.1
– 0.1
V
= – 20V, V = ØV
GS
DS
Gate Reverse Current
I
GSS
V
= – 20V, V = ØV
T = 150°C
GS
DS
A
Gate Source Cutoff Voltage
V
– 6 – 2.5 – 6
15 15
V
V
= 15V, I = 1 nA
GS(OFF)
DS
D
Drain Saturation Current (Pulsed)
I
5
5
mA
V
= 15V, V = ØV
DSS
DS
GS
Dynamic Electrical Characteristics
4500 7500 4500 7500 µS
V
= 15V, V = ØV
f = 1 kHz
Common Source
Forward Transconductance
DS
GS
g
g
fs
4000
4000
µS
µS
µS
V
= 15V, V = ØV
f = 400 MHz
f = 1 kHz
DS
GS
50
75
100
4
50
75
V
= 15V, V = ØV
DS
GS
Common Source
Output Conductance
V
= 15V, V = ØV
f = 100 MHz
f = 400 MHz
f = 1 MHz
f = 1 MHz
os
DS
GS
100 µS
V
= 15V, V = ØV
DS
GS
Common Source Input Capacitance
Common Source Output Capacitance
C
4
2
pF
pF
V
= 15V, V = ØV
iss
DS
GS
C
2
V
= 15V, V = ØV
oss
DS
GS
Common Source
Reverse Transfer Capacitance
C
0.8
0.8
pF
V
= 15V, V = ØV
f = 1 MHz
rss
DS
GS
100
1000
2500
10000
1000
4000
100 µS
1000 µS
2500 µS
10000 µS
1000 µS
4000 µS
dB
V
= 15V, V = ØV
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
Common Source
Input Conductance
DS
GS
g
b
b
is
V
= 15V, V = ØV
DS
GS
V
= 15V, V = ØV
Common Source
Input Susceptance
DS
GS
is
V
= 15V, V = ØV
DS
GS
V
= 15V, V = ØV
Common Source
Output Susceptance
DS
GS
os
V
= 15V, V = ØV
DS
GS
18
10
18
10
V
= 15V, I = 5mA
Common Source
Power Gain
DS
D
G
ps
dB
V
= 15V, I = 5mA
DS
D
2
4
2
4
dB
dB
V
= 15V, I = 5mA
DS
D
Noise Figure
NF
R = 1kΩ
G
TOÐ72 Package
See Section G for Outline Dimensions
Surface Mount
SMP4416, SMP4416A
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Note: rf parameters guaranteed, but not 100% tested.
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