B-10
01/99
2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Mixers
A
Reverse Gate Source & Reverse Gate Drain Voltage
– 30 V
10 mA
300 mW
2 mW/°C
¥ Oscillators
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating (to 150 °C)
¥ VHF Amplifiers
¥ Small Signal Amplifiers
2N4220
2N4221
2N4222
2N4220A
2N4221A
2N4222A
NJ16
NJ16
NJ32
Process
Test Conditions
At 25°C free air temperature:
Static Electrical Characteristics
Min Max Min Max Min Max Unit
Gate Source Breakdown Voltage
V
– 30
– 30
– 30
V
– 0.1 nA
– 0.1 µA
I = – 1µA, V = ØV
G DS
(BR)GSS
– 0.1
– 0.1
– 0.1
– 0.1
V
= – 15V, V = ØV
DS
GS
Gate Reverse Current
I
GSS
V
= – 15V, V = ØV
DS
T = 150°C
A
GS
– 0.5 – 2.5 – 1
(50) (50) (200) (200) (500) (500) µA
– 5
– 2
– 6
V
V
Gate Source Voltage
V
= 15V, I = ( )
D
GS
DS
Gate Source Cutoff Voltage
V
– 4
3
– 6
6
– 8
15
V
V
= 15V, I = 0.1 nA
GS(OFF)
DS D
Drain Saturation Current (Pulsed)
I
0.5
2
5
mA
V
= 15V, V = ØV
DSS
DS GS
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
g
1000 4000 2000 5000 2500 6000 µS
V
= 15V, V = ØV
f = 1 kHz
fs
DS GS
Common Source Forward Transmittance | Y |
750
750
750
µS
µS
pF
V
= 15V, V = ØV
f = 100 MHz
f = 1 kHz
fs
DS GS
Common Source Output Conductance
Common Source Input Capacitance
g
10
6
20
6
40
6
V
= 15V, V = ØV
os
DS GS
C
V
= 15V, V = ØV
f = 1 MHz
iss
DS GS
Common Source Reverse
Transfer Capacitance
C
2
2
2
pF
V
= 15V, V = ØV
f = 1 MHz
rss
DS GS
V
= 15V, V = ØV
GS
Noise Figure
2N4220A, 2N4221A, 2N4222A
DS
NF
2.5
2.5
2.5
dB
f = 100 MHz
R = 1 MΩ
G
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]