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2N3994 参数 Datasheet PDF下载

2N3994图片预览
型号: 2N3994
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道硅结型场效应晶体管 [P-Channel Silicon Junction Field-Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 1 页 / 95 K
品牌: INTERFET [ INTERFET CORPORATION ]
   
B-8  
01/99  
2N3994, 2N3994A  
P-Channel Silicon Junction Field-Effect Transistor  
Absolute maximum ratings at T = 25¡C  
¥ Choppers  
¥ High Speed Commutators  
A
Reverse Gate Source Voltage  
Reverse Gate Drain Voltage  
Continuous Forward Gate Current  
Continuous Device Power Dissipation  
Power Derating  
25 V  
25 V  
– 10 mA  
300 mW  
2.4 mW/°C  
At 25°C free air temperature:  
Static Electrical Characteristics  
2N3994  
2N3994A  
Process PJ99  
Test Conditions  
Min Max Min Max Unit  
Gate Source Breakdown Voltage  
Gate Source Cutoff Voltage  
V
25  
1
25  
1
V
V
I = 1 µA, V = ØV  
G DS  
(BR)GSS  
V
5.5  
5.5  
V
= – 10V, I = – 1 µA  
GS(OFF)  
DS  
D
Drain Saturation Current (Pulsed)  
I
– 2  
– 2  
mA  
V
= – 10V, V = ØV  
DSS  
DS  
GS  
– 1.2  
– 1.2  
– 1.2  
– 1  
– 1.2 nA  
– 1.2 µA  
– 1.2 nA  
V
= – 15V, I = ØA  
DG  
S
Drain Reverse Current  
Drain Cutoff Current  
I
DGO  
V
= – 15V, I = ØA  
T = 150°C  
A
DG  
S
V
= – 10V, V = 10V  
DS  
GS  
I
D(OFF)  
– 1  
µA  
V
= – 10V, V = 10V  
T = 150°C  
DS  
GS  
A
Dynamic Electrical Characteristics  
Drain Source ON Resistance  
r
300  
10  
16  
5
300  
10  
mS  
pF  
pF  
V
= ØV, I = Ø A  
f = 1 kHz  
f = 1 kHz  
f = 1 MHz  
f = 1 MHz  
ds(on)  
GS  
D
Common Source  
Forward Transmittance  
| Y |  
4
5
V
= – 10V, V = ØV  
fs  
DS  
GS  
Common Source Input Capacitance  
C
12  
V
= – 10V, V = ØV  
iss  
DS  
GS  
Common Source  
Reverse Transfer Capacitance  
C
3.5  
V
= Ø, V = 10V  
rss  
DS  
GS  
TOÐ72 Package  
Dimensions in Inches (mm)  
Pin Configuration  
1 Source, 2 Gate, 3 Drain, 4 Case  
1000 N. Shiloh Road, Garland, TX 75042  
(972) 487-1287 FAX (972) 276-3375  
www.interfet.com