01/99
B-7
2N3993, 2N3993A
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
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A
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
25 V
– 10 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
2N3993
2N3993A
Process PJ99
Test Conditions
I = 1 µA, V = ØV
Min Max Min Max Unit
Gate Source Breakdown Voltage
Gate Source Cutoff Voltage
V
25
4
25
4
V
V
(BR)GSS
G
DS
V
9.5
9.5
V
= – 10V, I = – 1 µA
GS(OFF)
DS
D
Drain Saturation Current (Pulsed)
I
– 10
– 10
mA
V
= – 10V, V = ØV
DSS
DS
GS
– 1.2
– 1.2
– 1.2
– 1
– 1.2 nA
– 1.2 µA
– 1.2 nA
V
= – 15V, I = ØA
DG
S
Drain Reverse Current
Drain Cutoff Current
I
DGO
V
= – 15V, I = ØA
T = 150°C
DG
S
A
V
= – 10V, V = 10 V
DS
GS
I
D(OFF)
– 1
µA
V
= – 10V, V = 10 V
T = 150°C
DS
GS
A
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
150
12
150
12
12
3
Ω
mS
pF
pF
V
= ØV, I = Ø A
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
ds(on)
GS
D
Common Source
Forward Transmittance
| Y |
6
7
V
= – 10V, V = ØV
fs
DS
GS
Common Source Input Capacitance
C
16
V
= – 10V, V = ØV
iss
DS
GS
Common Source
Reverse Transfer Capacitance
C
4.5
V
= Ø, V = 10V
rss
DS
GS
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain, 4 Case
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