01/99
B-3
2N3821, 2N3822
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
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A
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 50 V
10 mA
300 mW
2mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
2N3821
2N3822
Process NJ32
Test Conditions
I = – 1 µA, V = ØV
Min Max Min Max Unit
V
– 50
– 50
V
– 0.1 nA
– 0.1 µA
V
(BR)GSS
G
DS
– 0.1
– 0.1
V
= – 30V, V = ØV
GS
DS
Gate Reverse Current
I
GSS
V
= – 30V, V = ØV
T = 150°C
GS
DS
A
– 0.5 – 2
V
= 15V, I = 50 µA
DS
D
Gate Source Voltage
V
– 1 – 4
V
V
V
= 15V, I = 200 µA
GS
DS
D
V
= 15V, I = 400 µA
DS
D
Gate Source Cutoff Voltage
V
– 4
– 6
10
V
V
= 15V, I = 0.5 nA
GS(OFF)
DS
D
Drain Saturation Current (Pulsed)
I
0.5 2.5
2
mA
nA
µA
V
= 15V, V = ØV
DSS
DS
GS
V
= 15V, V = – 8V
DS
GS
Drain Cutoff Current
I
D(OFF)
V
= 15V, V = – 8V
T = 150°C
DS
GS
A
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
Ω
V
= ØV, I = Ø V
f = 1 kHz
f = 1 kHz
ds(on)
GS
D
Common Source
Forward Transconductance
g
1500 4500 3000 6500 µS
V
= 15V, V = ØV
fs
DS
GS
Common Source
Forward Transmittance
| Y |
1500
3000
µS
V
= 15V, V = ØV
f = 100 MHz
fs
DS
GS
Common Source Output Conductance
Common Source Input Capacitance
g
10
6
20
6
µS
pF
V
= 15V, V = ØV
f = 1 kHz
f = 1 MHz
os
DS
GS
C
V
= 15V, V = ØV
iss
DS
GS
Common Source
Reverse Transfer Capacitance
C
2
200
5
2
pF
V
= 15V, V = ØV
f = 1 MHz
f = 10 Hz
f = 10 Hz
rss
DS
GS
Equivalent Short Circuit
Input Noise Voltage
e¯
200 nV/√Hz
V
= 15V, V = ØV
N
DS
GS
V
= 15V, V = ØV
DS
GS
Noise Figure
NF
5
dB
R = 1 MΩ
G
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
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