AIDW40S65C5
CoolSiC™ Automotive Schottky Diode 650V G5
650V/40A Silicon Carbide Schottky Diode in TO247-3
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Junction Temperature range from -40°C to 175°C
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Potential Applications
Traction inverter
Booster / DCDC Converter
On board Charger / PFC
Product Validation
“Qualified for Automotive Applications. Product Validation according to AEC-Q100/101”
Description
The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for
Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers,
this family of products shows improved efficiency over all load conditions resulting from both its thermal
characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement
Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements in
the 650V voltage class.
Product Information
Parameter
VDC,max
Value/Unit
650 V
Pin
Pin 2, case Cathode
Pin 3 Anode
Definition
Ordering Code
Marking
AIDW40S65C5
AD4065C5
IF; TC< 117 °C
QC; VR= 400 V
EC; VR= 400 V
Tj,max
40 A
Package
56 nC
PG-TO247-3-41
SP001725204
SP Number
12.9 μJ
175 °C
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
V3.0
26.11.2018
Page 1 of 11
INFINEON [ Infineon ]
