6N135
6N136
HIGH-SPEED 2.5 kV TRIOS
OPTOCOUPLER
FEATURES
Isolation Test Voltage: 2500 VAC
• TTL Compatible
•
RMS
•
•
•
•
•
•
•
High Bit Rates: 1 Mbit/s
High Common-Mode Interference Immunity
Bandwidth 2 MHz
Dimensions in inches (mm)
Open-Collector Output
Pin
One
4
3
2
7
1
External Base Wiring Possible
Field-Effect Stable by TRIOS*
Underwriters Lab File #E52744
I.D.
Cathode
(V
8
7
6
5
1
2
3
4
NC
)
CC
Base
.268 (6.81)
.255 (6.48)
Anode
(V )
B
Collector
Cathode
NC
(V
)
DESCRIPTION
O
Emitter
(GND)
The 6N135 and 6N136 are optocouplers with a
GaAIAs infrared emitting diode, optically coupled
with an integrated photodetector which consists of
a photodiode and a high-speed transistor in a DIP-
8 plastic package.
5
6
8
.390 (9.91)
.379 (9.63)
.305 typ.
(7.75) typ.
.045 (1.14)
.030 (.76)
Signals can be transmitted between two electri-
cally separated circuits up to frequencies of 2
MHz. The potential difference between the circuits
to be coupled is not allowed to exceed the maxi-
mum permissible reference voltages.
.150 (3.81)
.130 (3.30)
.135 (3.43)
.115 (2.92)
4°
10 °
.040 (1.02)
.030 (.76 )
Typ.
Typ.
3°–9°
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
Maximum Ratings
.100 (2.54)
Typ.
Emitter
Reverse Voltage .................................................5 V
Forward Current ............................................25 mA
Peak Forward Current
Characteristics (T =0 to 70°C unless otherwise specified, T =25°C typ.)
A
A
Emitter
Symbol
Unit
Condition
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
V
1.6 (≤1.9)
≥5
V
I =16 mA
(t =1 ms, duty cycle 50%) ............................50 mA
Maximum Surge Forward Current
(t ≤1 µs, 300 pulses/s).......................................1 A
Thermal Resistance................................... 700 K/W
F
F
V
V
I =10 µA
R
BR
I
0.5 (≤10)
125
µA
pF
V =5 V
R
R
C
V =0 V, f=1 MHz
R
O
Total Power Dissipation (T ≤70°C) ...............45 mW
A
Temperature Coeffi-
cient, Forward Voltage
Detector
∆V /∆T
-1.7
mV/°C
I =16 mA
F
A
F
Supply Voltage ..................................... –0.5 to 15 V
Output Voltage .................................... –0.5 to 15 V
Emitter-Base Voltage ......................................... 5 V
Output Current.................................................8 mA
Maximum Output Current..............................16 mA
Base Current .................................................. 5 mA
Thermal Resistance................................... 300 K/W
Detector
Supply Current
Logic Low
I =16 mA, V open,
O
F
CC
I
150
µA
µA
V
=15 V
CCL
Supply Current
Logic High
I =0 mA, V open,
F
O
I
0.01 (≤1)
V
=15 V
CCH
CC
Output Voltage,
Output Low
6N135
I =16 mA,
F
V
=4.5 V
Total Power Dissipation (T ≤70°C) .............100 mW
CC
A
V
0.1 (≤0.4)
0.1 (≤0.4)
V
V
I =1.1 mA
OL
O
Package
6N136
V
I =2.4 mA
O
OL
Isolation Test Voltage (between emitter and
detector climate per DIN 40046,
part 2, Nov. 74 (t=1min.) ............... 2500 VAC
Output Current,
Output High
I
3 (≤500)
nA
I =0 mA,
F
CH
V =V =5.5 V
RMS
O
CC
Pollution Degree (DIN VDE 0109) ......................... 2
Creepage ...........................................................≥7 mm
Clearance ...........................................................≥7 mm
Comparative Tracking Index per
Output Current,
Output High
I =0 mA
F
I
0.01 (≤1)
µA
V =V =15 V
CH
O CC
Current Gain
H
150
V =5 V, I =3 mA
FE
O
O
Package
DIN IEC112/VDE 0303 part 1,
Coupling Capacitance
Input-Output
Group IIIa per DIN VDE 6110 ........................ 175
C
0.6
pF
f=1 MHz
IO
Isolation Resistance
12
V =500 V, T = 25°C ............................... ≥10
Ω
Ω
Current Transfer Ratio
IO
A
11
V =500 V, T = 100°C ............................. ≥10
IO
A
Storage Temperature Range ....... –55°C to +125°C
Ambient Temperature Range ...... –55°C to +100°C
Soldering Temperature (max. ≤10 sec.,
dip soldering ≥0.5 mm from
6N135
6N136
CTR
CTR
16 (≥7)
35 (≥19)
%
%
I =16 mA, V =0.4 V,
F
O
V
=4.5 V, T =25°C
CC
A
6N135
6N136
CTR
CTR
≥5
≥15
%
I =16 mA, V =0.5 V,
F O
V
=4.5 V
CC
case bottom).............................................. 260°C
*TRIOS—TRansparent IOn Shield
5–1
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