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6ED003L06F2XUMA2 参数 Datasheet PDF下载

6ED003L06F2XUMA2图片预览
型号: 6ED003L06F2XUMA2
PDF下载: 下载PDF文件 查看货源
内容描述: [Half Bridge Based MOSFET Driver,]
分类和应用: 驱动接口集成电路
文件页数/大小: 19 页 / 663 K
品牌: INFINEON [ Infineon ]
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6ED003-F2 family  
6ED003L02-F2 and 6ED003L06-F2 family  
200 V and 600 V three-phase gate driver with Over Current Protection (OCP),  
Enable (EN) and Fault  
Features  
Product summary  
VOFFSET (6ED003L06-F2) = 620 V max.  
VOFFSET (6ED003L02-F2) = 200 V max.  
Infineon thin-film-SOI-technology  
Maximum blocking voltage +600 V  
Output source/sink current +0.165 A/-0.375 A  
Insensitivity of the bridge output to negative  
transient voltages up to -50 V given by SOI-  
technology  
IO+/- (typ.)  
= +0.165 A / -0.375 A  
ton / toff  
= 530ns / 490 ns  
tf/tr (typ. CL=1 nF)  
= 60 ns / 26 ns  
Separate control circuits for all six drivers  
Detection of over current and under voltage supply  
Externally programmable delay for fault clear after  
over current detection  
Package  
DSO-28  
'Shut down' of all switches during error conditions  
Signal interlocking of every phase to prevent cross-  
conduction  
TSSOP-28  
Potential applications  
Home appliance, refrigeration compressors, air-conditioning  
Fans, pumps  
Motor drives, general purpose inverters  
Power tools, light electric vehicles  
Product validation  
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.  
Description  
The devices are full bridge drivers to control power devices like MOSFET or IGBTs in 3-phase systems with a  
maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on  
transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may  
occur at all temperatures and voltage conditions.  
The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down to  
3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic and an over-  
current detection. The over-current level is adjusted by choosing the resistor value and the threshold level at  
pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down of all six  
switches. An error signal is provided at the FAULT open drain output pin. The blocking time after over-current  
can be adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 µA.  
Therefore, the resistor RRCIN is optional. The typical output current can be given with 165 mA for pull-up and 375  
mA for pull down. Because of system safety reasons a 310 ns interlocking time has been realised. The function  
of input EN can optionally be extended with over-temperature detection, using an external NTC-resistor (see  
Figure 1).  
6ED003-F2 family Datasheet Please read the Important Notice and Warnings at the end of this document  
www.infineon.com/gdThreePhase 1 of 19  
Version 2.9  
2019-03-21