4N32/4N33
PHOTODARLINGTON
OPTOCOUPLER
FEATURES
Dimensions in inches (mm)
• Very High Current Transfer Ratio, 500% Min.
• High Isolation Resistance, 10 Ω Typical
• Standard Plastic DIP Package
11
Pin One ID.
2
1
3
1
2
3
6
5
4
Anode
Base
• Underwriters Lab File #E52744
.248 (6.30)
.256 (6.50)
Cathode
NC
Collector
Emitter
VE
•
VDE Approvals #0884 (Available with
D
Option 1)
4
5
6
DESCRIPTION
.335 (8.50)
.343 (8.70)
The 4N32 and 4N33 are optically coupled isolators
with a Gallium Arsenide infrared LED and a silicon
photodarlington sensor. Switching can be
achieved while maintaining a high degree of isola-
tion between driving and load circuits. These opto-
couplers can be used to replace reed and mercury
relays with advantages of long life, high speed
switching and elimination of magnetic fields.
.300 (7.62)
typ.
.039
(1.00)
min.
.130 (3.30)
.150 (3.81)
4°
typ.
18° typ.
.110 (2.79)
.150 (3.81)
.020 (.051) min.
.010 (.25)
.014 (.35)
Maximum Ratings
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300 (7.62)
.347 (8.82)
Emitter
.100 (2.54) typ.
Peak Reverse Voltage ........................................3 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C..........................100 mW
Derate Linearly from 55°C ....................1.33 mW/°C
Electrical Characteristics (T =25°C)
A
Parameter
Min.
Typ.
Max.
Unit
Condition
Detector
Emitter
Collector-Emitter Breakdown Voltage,
BV
.......................................................... 30 V
CEO
Forward Voltage
Reverse Current
Capacitance
Detector
1.25
0.1
25
1.5
V
I =50 mA
F
Emitter-Base Breakdown Voltage,
BV ............................................................. 8V
100
µA
pF
V =3.0 V
R
EBO
Collector-Base Breakdown Voltage,
BV .......................................................... 50 V
V =0 V
R
CBO
Emiter-Collector Breakdown Voltage,
BV ............................................................ 5 V
ECO
BV
*
*
30
50
8
V
I =100 µA, I =0
C F
CEO
Collector (load) Current...............................125 mA
Power Dissipation at 25°C Ambient ...........150 mW
Derate Linearly from 25°C ......................2.0 mW/°C
BV
V
I =100 µA, I =0
C F
CBO
BV
*
*
V
I =100 µA, I =0
C F
EBO
Package
Total Dissipation at 25°C Ambient .............250 mW
Derate Linearly from 25°C ......................3.3 mW/°C
Isolation Test Voltage......................... 5300 VAC
Between Emitter and Detector,
Standard Climate: 23°C/50%RH,
DIN 50014
BV
5
10
V
I =100 µA, I =0
ECO
CEO
E
F
I
1.0
13K
100
nA
V
=10 V, I =0
CE
F
RMS
H
I =0.5 mA
C
FE
Package
Leakage Path ........................................ 7 mm min.
Air Path................................................... 7 mm min.
Current Transfer Ratio
500
%
V
I =10 mA,
F
V
=10 V
CE
Isolation Resitance
12
V =500 V/25°C ...................................... ≥10
Ω
Ω
IO
V
1.0
1.5
I =2 mA,
C
CEsat
11
V =500 V/100°C .................................... ≥10
I =8 mA
IO
F
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Lead Soldering Time at 260°C .................... 10 sec.
Coupling Capacitance
Turn On Time
pF
5
µs
V
=10 V,
CC
I =50 mA
C
Turn Off Time
100
µs
I =200mA,
F
R =180 Ω
L
*Indicates JEDEC registered values
5–1
INFINEON [ Infineon ]
