PD-97573
2N7617UC
IRHLUC770Z4
60V, DUAL-N CHANNEL
TECHNOLOGY
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (LCC-6)
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLUC770Z4 100K Rads (Si) 0.75Ω 0.89A
IRHLUC730Z4 300K Rads (Si) 0.75Ω 0.89A
LCC-6
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
Features:
n
5V CMOS and TTL Compatible
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLUC7970Z4
Absolute Maximum Ratings (Per Die)
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 4.5V, T = 25°C Continuous Drain Current
0.89
D
GS
GS
C
A
I
D
= 4.5V, T = 100°C Continuous Drain Current
0.56
3.56
1.0
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.01
±10
V
GS
E
20
mJ
A
AS
I
0.89
0.1
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
mJ
V/ns
AR
dv/dt
4.7
T
-55 to 150
J
°C
g
T
Storage Temperature Range
Pckg. Mounting SurfaceTemp
Weight
STG
300 (for 5s)
0.2 (Typical)
For footnotes refer to the last page
www.irf.com
1
10/18/10
INFINEON [ Infineon ]
