PRELIMINARY
PD-97177B
2N7604U2
RADIATION HARDENED
IRHLNA77064
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-2)
60V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
IRHLNA77064
IRHLNA73064
Radiation Level RDS(on)
ID
56A*
56A*
100K Rads (Si)
300K Rads (Si)
0.012Ω
0.012Ω
SMD-2
Features:
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the
full operating temperature and post radiation. This is
achieved while maintaining single event gate rupture
and single event burnout immunity.
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
These devices are used in applications such as current
boost low signal source in PWM, voltage comparator
and operational amplifiers.
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@V
@V
= 4.5V,T = 25°C
Continuous Drain Current
56*
56*
D
D
GS
GS
C
A
I
= 4.5V,T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
224
DM
@ T = 25°C
P
D
250
W
W/°C
V
C
2.0
V
±10
GS
E
402
mJ
A
AS
I
56
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
25
mJ
V/ns
AR
dv/dt
6.9
T
-55 to 150
J
°C
g
T
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
STG
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/01/11
INFINEON [ Infineon ]
