2N7002DW
OptiMOS™ Small-Signal-Transistor
Features
Product Summary
VDS
60
3
V
• Dual N-channel
RDS(on),max
VGS=10 V
VGS=4.5 V
W
• Enhancement mode
• Logic level
4
• Avalanche rated
ID
0.3
A
• Fast switching
• Qualified according to AEC Q101
PG-SOT363
• 100% lead-free; RoHS compliant
6
5
4
• Halogen-free according to IEC61249-2-21
1
2
3
Type
Package
Tape and Reel Information
Marking
HalogenFree Packing
Yes Non Dry
2N7002DW PG-SOT363 H6327: 3000 pcs/reel
X8s
Parameter 1)
Value
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
Continuous drain current
0.30
0.24
A
I D,pulse
T A=25 °C
Pulsed drain current
1.2
1.3
EAS
I D=0.3 A, R GS=25 W
Avalanche energy, single pulse
mJ
I D=0.3 A, VDS=48 V,
di/dt =200 A/µs,
T j,max=150 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
V
VGS
Gate source voltage
±20
ESD class
JESD22-A114 (HBM)
class 0 (<250V)
0.5
Ptot
T A=25 °C
Power dissipation
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
1) Remark: one of both transistors in operation.
Rev.2.3
page 1
2014-09-19
INFINEON [ Infineon ]
