SPW24N60C3
CoolMOSTM Power Transistor
Features
Product Summary
DS @ T j,max
R DS(on),max
I D
V
650
V
Ω
A
• New revolutionary high voltage technology
• Ultra low gate charge
0.16
24.3
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO247
Type
Package
Ordering Code Marking
SPW24N60C3
P-TO247
Q67040-S4640
24N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
24.3
15.4
72.9
780
Continuous drain current
A
Pulsed drain current1)
I D,pulse
E AS
I D=12.1 A, V DD=50 V
Avalanche energy, single pulse
mJ
1),2)
1)
E AR
I AR
I D=24.3 A, V DD=50 V
1.5
Avalanche energy, repetitive t AR
24.3
A
Avalanche current, repetitive t AR
Drain source voltage slope
Gate source voltage
I D=24.3 A,
50
dv /dt
V/ns
V
V
DS=480 V, T j=125 °C
V GS
±20
±30
static
V GS
AC (f >1 Hz)
T C=25 °C
P tot
240
Power dissipation
W
T j, T stg
-55 ... 150
Operating and storage temperature
°C
Rev. 1.0
page 1
2004-04-27
INFINEON [ Infineon ]
