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EI8LC15CX 参数 Datasheet PDF下载

EI8LC15CX图片预览
型号: EI8LC15CX
PDF下载: 下载PDF文件 查看货源
内容描述: 低电容,双向,单片TVS二极管网络 [Low Capacitance, Bidirectional, Monolithic TVS Diode Network]
分类和应用: 二极管电视
文件页数/大小: 2 页 / 150 K
品牌: IMP [ IMP, INC ]
 浏览型号EI8LC15CX的Datasheet PDF文件第2页  
Ei8LC05 thru Ei8LC15  
Low Capacitance, Bidirectional, Monolithic  
TVS Diode Network  
independent for multiple I/O port protection.  
FEATURES  
These monolithic diode array networks can be  
used to protect combinations of 8 unidirectional  
or bi-directional lines. They provide ESD and  
surge protection for sensitive power and I/O  
ports. The 8LC series TVS diode array will meet  
the surge and ESD per IEC 1000-4-2.  
· 500 watts Peak Pulse Power (tp = 8 x 20 µs)  
· ESD and Transient protection for data, signal  
and Vcc bus to IEC 1000-4-2  
(formerly IEC 801-2)  
· Protects up to 4 bi-directional lines  
· Standoff voltages from 5 to 15 V  
· Low capacitance for high speed interfaces  
· Low clamping voltage  
Applications  
· ESD & surge protection for power lines & I/O  
ports  
· ESD protection >8kV  
· TTL and MOS Bus Lines  
· RS-232, Rs-422 and RS-485 data lines  
· High speed logic  
DESCRIPTION  
The Ei8LC series of monolithic transient voltage  
suppressors are designed for applications where  
voltage transients, caused by electrostatic  
discharge (ESD) and other induced voltage  
surges, can permanently damage voltage  
sensitive components. These TVS diodes are  
characterized by their high surge capability,  
extremely fast response time and low on-  
resistance.  
· High speed data & video transmission  
MECHANICAL CHARACTERISTICS  
· Available in 8 lead SOIC and PDIP  
· Solder temperature : 265°C for 10 seconds  
Schematic  
1
2
3
4
8
7
The Ei8LC series consists of bi-directional diode  
arrays with low input capacitances and is  
specifically designed to protect multiple or single  
data lines with each channel being electrically  
6
5
Part Numbers May Be Marked With "IMP" or "Ei."  
MAXIMUM RATINGS  
RATING  
SYMBOL  
VALUE  
UNIT  
Peak Pulse Power (tp = 8 x 20 µs)  
Operating Temperature  
Storage Temperature  
Ppk  
Tj  
Tstg  
300  
-55 to +150  
-55 to +150  
Watts  
°C  
°C  
ELECTRICAL CHARACTERISTICS @ 25°C  
Reverse  
Stand-off  
Voltage  
Min  
Vbr  
Max  
Clamping Clamping  
Voltage  
Max  
Leakage  
Current  
@ V  
Max.  
Cap.  
@0V, 1Mhz  
@ 1mA Voltage  
RWM  
@Ipp=1A @Ipp = 10A  
V
Volts  
5
BV(min)  
Volts  
6
8.5  
13.3  
16.7  
Vc  
Vc  
I
Cj  
pf  
15  
15  
15  
15  
RWM  
R
Volts  
9.8  
13.4  
19.0  
25.5  
Volts  
12.5  
16.6  
23.5  
29.5  
µA  
400  
Ei8LC05CX  
Ei8LC08CX  
Ei8LC12CX  
Ei8LC15CX  
8
12  
15  
10  
2
2
Note : Clamping voltage values are based upon an industry standard 8 x 20µs peak pulse current (Ipp) waveform.  
X= S for SOIC package, X= P for P-Dip Packag  
For additional information, contact IMP, Inc. at 408.432.9100 or visit www.impweb.com  
IMP, Inc. acquired Epic products on January 26, 2001. (see press release at http://www.impweb.com/PRESS/PR012601.htm)