®
ISO 9001 Registered
Process C3015
CMOS 3µm
Digital
Electrical Characteristics
T=25oC Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Symbol
VTN
γN
Minimum
Typical
0.8
0.6
47
3.2
Maximum
Unit
V
Comments
100x3µm
100x3µm
100x100µm
100x3µm
Per side
0.6
1.0
V1/2
µA/V2
µm
µm
V
Conduction Factor
βN
LeffN
∆WN
BVDSSN
VTFP(N)
42
2.85
52
3.55
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
0.7
12
12
V
P-Channel Transistor
Threshold Voltage
Body Factor
Symbol
VTP
γP
Minimum
Typical
–0.8
0.55
15
3.2
0.9
Maximum
Unit
V
Comments
100x3µm
100x3µm
100x100µm
100x3µm
Per side
–0.6
–1.0
V1/2
µA/V2
µm
µm
V
Conduction Factor
βP
LeffP
∆WP
BVDSSP
VTFP(P)
13
2.85
19
3.55
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
–12
–12
V
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Symbol
Minimum
3.2
Typical
4.8
21
0.8
80
0.7
Maximum
Unit
KΩ/o
Ω/o
µm
Ω/o
µm
Comments
P-well
ρP-well(f)
6.5
27
ρN+
16
xjN+
ρP+
50
100
xjP+
Gate Oxide Thickness
Gate Poly Sheet Resistance
Metal-1 Sheet Resistance
Passivation Thickness
TGOX
37.5
15
40.0
22
30
42.5
30
60
nm
ρPOLY1
Ω/o
mΩ/o
nm
ρM1
TPASS
200+900
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Symbol
COX
CM1P
Minimum
Typical
0.72
0.0523
0.030
Maximum
Unit
Comments
0.66
0.78
fF/µm2
fF/µm2
fF/µm2
CM1S
0.026
0.034
89
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IMP [ IMP, INC ]
