®
ISO 9001 Registered
Process C1227
HV BiCMOS 1.2µm
30V Double Metal - Double Poly
Electrical Characteristics
T=25oC Unless otherwise noted
Symbol
N-Channel High Voltage Transistor
Minimum
Typical
0.9
Maximum
Unit
Comments
Threshold Voltage
Punch Through Voltage
ON Resistance
HVTN
HVBVDSSP
HVPR0N
0.7
36
1.1
V
V
mΩ-
cm2
V
1.4
@VGS = 5V
VDS = 0.1V
Operating Voltage
VGS = 5V
VDS = 30V
N-Channel Low Voltage Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
VTN
γN
βN
0.4
0.6
0.8
V
100x1.4µm
100x1.4µm
0.50
64.0
1.20
0.65
75.0
1.35
0.45
0.80
86.0
1.50
V1/2
µA/V2 100x100µm
LeffN
∆WN
BVDSSN
µm
µm
V
100x1.4µm
Per side
8
Poly Field Threshold Voltage VTFPN
10
18
Typical
–0.9
V
Symbol
Minimum
Maximum
Unit
Comments
P-Channel High Voltage Transistor
Threshold Voltage
Punch Through Voltage
ON Resistance
HVTP
HVBVDSSP
HVPR0N
–0.7
–36
–1.1
V
V
11.0
mΩ- @VGS = –5V
cm2 @VDS = –0.1V
P-Channel Low Voltage Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
VTP
γ P
–0.8
0.35
20.0
1.35
–0.6
0.50
25.0
1.50
0.40
–0.4
0.65
30.0
1.65
V
100x1.4µm
100x1.4µm
V1/2
β
µA/V2 100x100µm
P
LeffP
∆WP
BVDSSP
µm
µm
V
100x1.4µm
Per side
–8
Poly Field Threshold Voltage VTFP(P)
–10
–18
V
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-2 to Metal-1
Symbol
COX
CM1P
Minimum
1.338
0.040
Typical
1.439
0.046
0.050
Maximum
1.569
Unit
Comments
fF/µm2
fF/µm2
fF/µm2
0.052
0.057
CMM
0.043
Vertical NPN Transistor
Beta
Early Voltage
Symbol
Minimum
Typical
140
34
1.89
Maximum
Unit
Comments
4.5x4.5µm
hFE
VA
fτ
50
240
V
GHz
Cut-Off Frequency
71
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IMP [ IMP, INC ]
