®
ISO 9001 Registered
Process C1226
CMOS 1.2µm
100V CMOS, Double Metal - Double Poly
Electrical Characteristics
T = 25oC Unless otherwise noted
Symbol
N-Channel High Voltage Transistor
Minimum
Typical
0.90
Maximum
Unit
Comments
Threshold Voltage
Punch Through Voltage
ON Resistance
HVTN
HVBVDSSN
HVPR0N
0.70
120
550
1.10
V
V
Ω
700
850
W/L = 147/5
Operating Voltage
V
GS = 5V
VDS = 100V
N-Channel Low Voltage Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
VTN
γN
βN
0.30
64
0.45
0.475
78
1.35
0.4
0.65
92
V
V1/2
µA/V2
µm
µm
V
100x1.5µm
100x1.5µm
100x100µm
100x1.5µm
Per side
LeffN
∆WN
BVDSSN
5
8
12
15
Poly Field Threshold Voltage VTFPN
V
Symbol
Minimum
Typical
Maximum
–1.10
Unit
Comments
P-Channel High Voltage Transistor
Threshold Voltage
Punch Through Voltage
ON Resistance
HVTP
HVBVDSSP
HVPR0N
–0.70
–120
2000
–0.90
V
V
Ω
2500
3000
W/L = 139/5
Operating Voltage
VGS = 5V
V
DS = 100V
V
P-Channel Low Voltage Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
VTP
γ P
β P
LeffP
∆WP
BVDSSP
-0.65
20
–0.45
0.6
25
1.5
0.4
–0.30
30
V
V1/2
µA/V2
µm
µm
V
100x1.5µm
100x1.5µm
100x100µm
100x1.5µm
Per side
–5
–8
–12
–12
Poly Field Threshold Voltage VTFP(P)
V
69
© 2001 IMP, Inc.
IMP [ IMP, INC ]
