®
ISO 9001 Registered
Process C1004
CMOS 1.0µm
5 Volt Digital
Electrical Characteristics
T=25oC Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold
Symbol
VTN
γN
Minimum
Typical
0.75
0.60
87
0.75
0.8
Maximum
Unit
V
Comments
100x1.0µm
100x1.0µm
0.55
0.95
V1/2
βN
LeffN
∆WN
74
0.60
100
0.90
µA/V2 100x100µm
µm
µm
V
100x1.0µm
Per side
BVDSSN
7
10
VTFP(N
)
V
P-Channel Transistor
Threshold Voltage
Body Factor
Symbol
VTP
γP
Minimum
–0.85
Typical
–1.0
0.4
Maximum
Unit
V
Comments
100x1.0µm
100x1.0µm
–1.15
V1/2
Conduction Factor
βP
24
28
32
µA/V2 100x100µm
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
LeffP
∆WP
BVDSSP
VTFP(P)
0.83
0.98
0.85
1.13
µm
µm
V
100x1.0µm
Per side
–7
–10
V
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
Symbol
Minimum
0.8
Typical
1.0
35
0.45
80
0.5
20
700
22
50
Maximum
1.22
Unit
KΩ/o n-well
Ω/o
µm
Ω/o
µm
nm
nm
Ω/o
Comments
ρN-well(f)
ρN+
20
50
xjN+
ρP+
60
15
100
30
xjP+
TGOX
TFIELD
ρPOLY
ρM1
ρM2
mΩ/o
mΩ/o
nm
30
200+900
TPASS
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to SIlicon
Metal-2 to Metal-1
Symbol
Cox
CM1P
CMIS
Minimum
Typical
1.64
0.046
0.028
0.038
Maximum
Unit
Comments
1.52
1.82
fF/µm2
fF/µm2
fF/µm2
fF/µm2
CMM
© IMP, Inc.
17
IMP [ IMP, INC ]
