®
ISO 9001 Registered
Process C0810
CMOS 0.8µm
High-Resistance Poly for Analog
Electrical Characteristics
T=25oC Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold
Symbol
VTN
γN
Minimum
Typical
0.8
0.74
94
0.8
0.3
Maximum
Unit
V
Comments
100x0.8µm
100x0.8µm
100x100µm
100x0.8µm
Per side
0.6
1.0
V1/2
µA/V2
µm
µm
V
βN
LeffN
∆WN
BVDSSN
VTFP(N)
75
115
7
10
13
17
V
P-Channel Transistor
Threshold Voltage
Body Factor
Symbol
VTP
γP
Minimum
Typical
–0.9
0.57
31
0.85
0.4
Maximum
Unit
V
Comments
100x0.8µm
100x0.8µm
100x100µm
100x0.8µm
Per side
–0.7
–1.1
V1/2
µA/V2
µm
µm
V
Conduction Factor
βP
LeffP
∆WP
BVDSSP
VTFP(P)
25
37
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
–7
–10
–12
–17
V
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Symbol
Minimum
0.50
Typical
0.65
60
0.25
90
Maximum
0.80
Unit
KΩ/o
Ω/o
µm
Ω/o
µm
Comments
n-well
ρN-well(f)
ρN+
45
75
xjN+
ρP+
68
112
xjP+
0.4
Gate Oxide Thickness
Field Oxide Thickness
Bottom Poly Sheet Res.
Gate Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
High Resistance Poly
TGOX
TFIELD
ρPOLY1
ρPOLY2
ρM1
ρM2
17.5
700
23
23
60
30
200+900
2.0
nm
nm
15
15
40
20
32
32
80
40
Ω/o
Ω/o
mΩ/o
mΩ/o
nm
TPASS
ρHI-POLY
oxide+nit.
1.5
2.5
KΩ/o
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to Silicon
Metal-2 to Metal-1
Poly-1 to Poly-2
Symbol
COX
CM1P
CM1S
CMM
Minimum
Typical
1.97
0.046
0.028
0.038
0.822
Maximum
Unit
Comments
fF/µm2
fF/µm2
fF/µm2
fF/µm2
fF/µm2
CPP
0.69
1.015
15
© IMP, Inc.
IMP [ IMP, INC ]
