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IBMB6N32644JGA-8NT 参数 Datasheet PDF下载

IBMB6N32644JGA-8NT图片预览
型号: IBMB6N32644JGA-8NT
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM Module, 32MX64, 0.8ns, CMOS, DIMM-184]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 22 页 / 429 K
品牌: IBM [ IBM ]
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IBMB6N32644JGA  
Preliminary  
Features  
32Mx64 Two Bank Unbuffered DDR SDRAM Module  
• DRAM D aligns DQ and DQS transitions with  
LL  
clock transitions. Also aligns QFC transitions  
with clock during Read cycles  
• Differential clock inputs  
• Data is read or written on both clock edges  
• Address and control signals are fully synchro-  
nous to positive clock edge  
• 184-Pin Unbuffered 8-Byte Dual In-Line  
Memory Module  
• 32Mx64 Double Data Rate (DDR) SDRAM  
DIMM (16M X 8 SDRAMS)  
• Performance:  
• Programmable Operation:  
PC1600 PC2100  
Units  
DIMM CAS Latency  
Clock Frequency  
Clock Cycle  
2
2.5  
133  
7.5  
- DIMM CAS Latency: 2, 2.5  
- Burst Type: Sequential or Interleave  
- Burst Length: 2, 4, 8  
f
t
f
100  
10  
MHz  
ns  
CK  
CK  
DQ  
- Operation: Burst Read and Write  
• Auto Refresh (CBR) and Self Refresh Modes  
• Automatic and controlled precharge commands  
• 12/10/2 Addressing (row/column/bank)  
• 15.6 µs Max. Average Periodic Refresh Interval  
• Card size: 5.25" x 0.157" x 1.25"  
• Gold contacts  
DQ Burst Frequency  
200  
266  
MHz  
• Intended for 100 MHz and 133 MHz applica-  
tions  
• Inputs and outputs are SSTL-2 compatible  
• V = 2.5Volt ± 0.2, V  
= 2.5Volt ± 0.2  
DD  
DDQ  
• Single Pulsed RAS interface  
• SDRAMs have four internal banks for concur-  
rent operation  
• SDRAMS in 66-pin TSOP-II Package  
• Serial Presence Detect  
• Module has two physical banks  
Description  
IBMB6N32644JGA is an unbuffered 184-Pin Double  
Data Rate (DDR) Synchronous DRAM Dual In-Line  
Memory Module (DIMM), organized as a two-bank  
high-speed memory array. The 32Mx64 module is a  
dual-bank DIMM that uses sixteen 16Mx8 DDR  
SDRAMs in 400 mil TSOP packages. The DIMM  
achieves high-speed data transfer rates of up to 266  
MHz.  
be programmed into the DIMM by address inputs  
A0-A11 and I/O inputs BA0 and BA1 using the  
mode register set cycle.  
These DIMMs are manufactured using raw cards  
developed for broad industry use as reference  
designs. The use of these common design files min-  
imizes electrical variation between suppliers.  
The DIMM uses serial presence detects imple-  
mented via a serial EEPROM using the two-pin IIC  
protocol. The first 128 bytes of serial PD data are  
programmed and locked during module assembly.  
The last 128 bytes are available to the customer.  
The DIMM is intended for use in applications oper-  
ating from 100 MHz to 133 MHz clock speeds with  
data rates of 200 to 266 MHz.  
Clock enables CKE0 and/or CKE1 control all  
devices on the DIMM.  
All IBM 184 DDR SDRAM DIMMs provide a high-  
performance, flexible 8-byte interface in a 5.25” long  
space-saving footprint.  
Prior to any access operation, the device CAS  
latency and burst type/length/operation type must  
Card Outline  
1
92  
184  
(Front)  
(Back) 93  
52 53  
144 145  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
88H4717.H41859  
12/00  
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