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IBMB3N8644HCB-260T 参数 Datasheet PDF下载

IBMB3N8644HCB-260T图片预览
型号: IBMB3N8644HCB-260T
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 19 页 / 361 K
品牌: IBM [ IBM ]
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IBM13N8644HCC  
IBM13N8734HCC  
8M x 64/72 One-Bank Unbuffered SDRAM Module  
Features  
• 168-Pin Unbuffered 8-Byte Dual In-Line Memory  
Module  
• Programmable Operation:  
- CAS Latency: 2, 3  
• 8Mx64/72 Synchronous DRAM DIMM  
• Three speed sorts:  
- Burst Type: Sequential or Interleave  
- Burst Length: 1, 2, 4, 8, Full-Page  
(Full-Page supports Sequential burst only)  
- Operation: Burst Read and Write or Multiple  
Burst Read with Single Write  
• -260 and -360 for PC100 applications  
• -10 for 66MHz applications (typical)  
• Inputs and outputs are LVTTL (3.3V) compatible  
• Single 3.3V ± 0.3V Power Supply  
• Single Pulsed RAS interface  
• Suspend Mode and Power Down Mode  
• 12/9/2 Addressing (Row/Column/Bank)  
• 4096 Refresh cycles distributed across 64ms  
• Serial Presence Detect  
• SDRAMs have 4 internal banks  
• Module has 1 bank  
• Fully Synchronous to positive Clock Edge  
• Data Mask for Byte Read/Write control  
• Auto Refresh (CBR) and Self Refresh  
• Automatic and controlled Precharge commands  
• Card size: 5.25" x 1.375" x 0.106"  
• Gold contacts  
• SDRAMs in TSOP Type II Package  
Description  
IBM13N8644HCC / IBM13N8734HCC are unbuf-  
fered 168-pin Synchronous DRAM Dual In-Line  
Memory Modules (DIMMs) which are organized as  
8Mx64 and 8Mx72 high-speed memory arrays. The  
DIMMs use eight (8Mx64) or nine (8Mx72) 8Mx8  
SDRAMs in 400mil TSOP II packages. The DIMMs  
achieve high-speed data transfer rates of up to  
100MHz by employing a prefetch/pipeline hybrid  
architecture that supports the JEDEC 1N rule while  
allowing very low burst power.  
ating modes are defined by combinations of RAS,  
CAS, WE, S0/S2, DQMB, and CKE0 signals. A  
command decoder initiates the necessary timings  
for each operation. A 14-bit address bus accepts  
address information in a row/column multiplexing  
arrangement.  
Prior to any Access operation, the CAS latency,  
burst type, burst length, and Burst operation type  
must be programmed into the DIMM by address  
inputs A0-A9 during the Mode Register Set cycle.  
The -10 speed sort DIMMs comply with JEDEC  
standards for 168-pin unbuffered SDRAM DIMMs.  
The DIMM uses serial presence detects imple-  
mented via a serial EEPROM using the two-pin IIC  
protocol. The first 128 bytes of serial PD data are  
used by the DIMM manufacturer. The last 128 bytes  
are available to the customer.  
The -260 and -360 speed sort DIMMs are compati-  
ble with the Intel PC100 SDRAM unbuffered DIMM  
specification.  
All control, address, and data input/output circuits  
are synchronized with the positive edge of the exter-  
nally supplied clock inputs.  
All IBM 168-pin DIMMs provide a high-performance,  
flexible 8-byte interface in a 5.25" long space-saving  
footprint. Related products include both EDO DRAM  
and SDRAM unbuffered DIMMs in both non-parity  
x64 and ECC-Optimized x72 configurations.  
All inputs are sampled at the positive edge of each  
externally supplied clock (CK0, CK2). Internal oper-  
Card Outline  
(Front)  
(Back)  
10 11  
94 95  
84  
168  
1
85  
40 41  
124 125  
19L7295.E93875B  
12/99  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
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