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IBMB3N32644JCB-75AT 参数 Datasheet PDF下载

IBMB3N32644JCB-75AT图片预览
型号: IBMB3N32644JCB-75AT
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-168]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 18 页 / 329 K
品牌: IBM [ IBM ]
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IBMB3N32644JCB  
IBMB3N32734JCB  
Preliminary  
Features  
32M x 64/72 Two-Bank Unbuffered SDRAM Module  
• 168-Pin Unbuffered 8-Byte Dual In-Line Memory  
• Auto Refresh (CBR) and Self Refresh  
• Automatic and controlled Precharge commands  
• Programmable Operation:  
Module  
• 32Mx64/72 Synchronous DRAM DIMM  
• Intended for PC133 applications  
- CAS Latency: 3  
- Burst Type: Sequential or Interleave  
- Burst Length: 1, 2, 4, 8  
- Clock Frequency: 133MHz  
- Clock Cycle: 7.5ns  
- Operation: Burst Read and Write or Multiple  
Burst Read with Single Write  
• Suspend Mode and Power Down Mode  
• 12/10/2 Addressing (Row/Column/Bank)  
• 4096 Refresh cycles distributed across 64ms  
• Card size: 5.25" x 1.375" x 0.158" max  
• Gold contacts  
• DRAMs in TSOP Type II Package  
• Serial Presence Detect with Write Protect  
- Clock Assess Time: 5.4ns  
• Inputs and outputs are LVTTL (3.3V) compatible  
• Single 3.3V ± 0.3V Power Supply  
• Single Pulsed RAS interface  
• SDRAMs have 4 internal banks  
• Module has 2 Physical banks  
• Fully Synchronous to positive Clock Edge  
• Data Mask for Byte Read/Write control  
Description  
IBMB3N32644JCB / IBMB3N32734JCB are unbuf-  
fered 168-pin Synchronous DRAM Dual In-Line  
Memory Modules (DIMMs) which are organized as  
32Mx64 and 32Mx72 high-speed memory arrays  
and are configured as two 16M x 64/72 physical  
banks. The DIMMs use sixteen (32Mx64) or eigh-  
teen(32Mx72) 16Mx8 SDRAMs in 400mil TSOP II  
packages. The DIMMs achieve high-speed data-  
transfer rates of up to 133MHz by employing a  
prefetch/pipeline hybrid architecture that supports  
the JEDEC 1N rule while allowing very low burst  
power.  
A command decoder initiates the necessary timings  
for each operation. A 14-bit address bus accepts  
address information in a row/column multiplexing  
arrangement.  
Prior to any Access operation, the CAS latency,  
burst type, burst length, and burst operation type  
must be programmed into the DIMM by address  
inputs A0-A9 during the Mode Register Set cycle.  
The DIMM uses serial presence detects imple-  
mented via a serial EEPROM using the two pin IIC  
protocol. The first 128 bytes of serial PD data are  
used by the DIMM manufacturer. The last 128 bytes  
are available to the customer.  
All control, address, and data input/output circuits  
are synchronized with the positive edge of the exter-  
nally supplied clock inputs.  
All IBM 168-pin DIMMs provide a high-performance,  
flexible 8-byte interface in a 5.25” long space-saving  
footprint.  
All inputs are sampled at the positive edge of each  
externally supplied clock (CK0 - CK3). Internal oper-  
ating modes are defined by combinations of RAS,  
CAS, WE, S0-S3, DQMB, and CKE0-CKE1 signals.  
Card Outline  
(Front)  
(Back)  
10 11  
94 95  
84  
1
40 41  
124 125  
168  
85  
75H2786.H42055  
11/00  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
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