IBM11S2320NL2M
x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au.
IBM11S2325HP IBM11S4325HP
IBM11S2325HM IBM11S4325HM
2M/4M x 32 SO DIMM Module
Features
• 72-Pin Small Outline Dual-In-Line
Memory Module
• Performance:
• High Performance CMOS process
• Single 3.3 ± 0.3V or 5.0 ± 0.25V Power Supply
• Low active current consumption
• All inputs & outputs are LVTTL(3.3V) or TTL(5V)
compatible
• Extended Data Out (EDO) access cycle
• Refresh Modes: RAS-Only, CBR, Hidden and
Self Refresh
• 2048 refresh cycles distributed across 128ms
• 11/10 Addressing (Row/Column)
• Optimized for use in byte-write non-parity appli-
cations.
-60
-6R
-70
tRAC
tCAC
tAA
RAS Access Time
CAS Access Time
60ns 60ns 70ns
15ns 17ns 20ns
Access Time From Address 30ns 30ns 35ns
tRC
Cycle Time
104ns 104ns 124ns
25ns 25ns 30ns
tHPC
EDO Mode Cycle Time
• Au contacts
Description
The IBM11S4325HP/M are 16MB industry standard
72-pin 4-byte small outline dual in-line memory mod-
ules (SO DIMMs). The modules are organized as
4Mx32 high speed memory arrays that are intended
for use in 16, 32 and 64 bit applications. They are
manufactured with eight 2Mx8 TSOP devices, each
in a 400mil package. The IBM11S1325HP/M are
8MB half populated versions, manufactured with
four 2Mx8 TSOP devices.
60/6Rns sort). The use of TSOP packages allows
for tight DIMM spacing (.3” on center). Input loading
is consistent with 4Mb-based assemblies due to the
addition of discrete capacitors maximizing compati-
bility at the system level.
These assemblies are intended for use in space
constrained and/or low power applications.
The IBM 72-Pin SO DIMMs provide a high perfor-
mance, flexible 4-byte interface in a 2.35” long foot-
print.
The use of EDO DRAMs allows for a reduction in
cycle time from 40ns (Fast Page) to 25ns (EDO,
Card Outline
Detail A
See Detail A
for 5.0V version
(Front) 1
(Back) 2
71
72
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
75H1718
SA14-4471-00
Revised 4/96
Page 1 of 21
IBM [ IBM ]
