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IBM11M2735H-70T 参数 Datasheet PDF下载

IBM11M2735H-70T图片预览
型号: IBM11M2735H-70T
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 2MX72, 70ns, CMOS, DIMM-168]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 29 页 / 351 K
品牌: IBM [ IBM ]
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Discontinued (9/98 - last order; 3/99 - last ship)  
IBM11M1730BB1M  
x 72 E10/10, 3.3V, Au.  
IBM11M2735H  
IBM11M2735HB  
2M x 72 DRAM MODULE  
Features  
• Au contacts  
• 168 Pin JEDEC Standard, 8 Byte Dual In-line  
Memory Module  
• Optimized for ECC applications  
• System Performance Benefits:  
- Buffered inputs (except RAS, Data)  
• 2Mx72 Fast Page Mode DIMM  
• Performance:  
- Reduced noise (32 V /V pins)  
- Buffered PDs  
SS CC  
-60  
-70  
tRAC  
tCAC  
tAA  
RAS Access Time  
60ns  
20ns  
35ns  
70ns  
25ns  
40ns  
• Extended Data Out (EDO) Mode, Read-Modify-  
Write Cycles  
CAS Access Time  
Access Time From Address  
Cycle Time  
• Refresh Modes: RAS-Only, CBR and Hidden  
Refresh  
tRC  
104ns 124ns  
25ns 30ns  
tHPC  
EDO Page Mode Cycle Time  
• 2048 refresh cycles distributed across 32ms  
• 11/10 addressing (Row/Column)  
• Card size: 5.25" x 1.0" x 0.157"  
• DRAMS in TSOP Package  
• All inputs and outputs are LVTTL (3.3V) or TTL  
(5.0V) compatible  
• Single 3.3V ± 0.3V or 5.0V ± 0.5V Power Supply  
Description  
IBM11M2735H is an industry standard 168-pin  
8-byte Dual In-line Memory Module (DIMM) which is  
organized as a 2Mx72 high speed memory array  
designed with EDO DRAMs for ECC applications.  
The DIMM uses 9 2Mx8 DRAMs in TSOP packages.  
The use of EDO DRAMs allows for a reduction in  
Page Mode Cycle time from 40ns (Fast Page) to  
25ns for 60ns DRAM modules.  
Presence Detect (PD) and Identification Detect (ID)  
bits provide information about the DIMM density,  
addressing, performance and features. PD bits can  
be dotted at the system level and activated for each  
DIMM position using the PD enable (PDE) signal. ID  
bits also allow detection of card features, and may  
be dot-or’d at the system level to provide information  
for the entire DIMM bank. For example, the system  
will determine that ECC DIMMs are installed if PD8  
is low (0). ID0 need not be sensed since both x72  
and x80 ECC DIMMs will function in a x72 bank.  
Improved system performance is provided by the  
on-DIMM buffering of selected input signals. The  
specified timings include all buffer, net and skew  
delays, which simplifies the memory subsystem  
design analysis. The data and RAS signals are not  
buffered, which preserves the DRAM access specifi-  
cations of 60ns and 70ns.  
All IBM 168-pin DIMMs provide a high performance,  
flexible 8-byte interface in a 5.25” long space-saving  
footprint. Related products are the x64 and x72 par-  
ity (5V) DIMMs and ECC DIMMs (5V and 3.3V).  
Card Outline 3.3V  
Detail A  
(Front)  
(Back)  
1
85  
10 11  
94 95  
84  
168  
40 41  
124 125  
See Detail A  
for 5.0V Version  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
50H4199  
SA14-4615-02  
Revised 5/96