IBM11D2320H2M
x 3210/10, 5.0V, LC, Sn/PbMMDS45DSU-021040820. MMDS45DSU-021040820.
IBM11D2320H
2M x 32 DRAM Module
Features
• 72-Pin Single-In-Line Memory Module
• Performance:
• Thin outline (.104”)
• Single 5V ± 0.5V Power Supply
• Low current consumption
• All inputs & outputs are fully TTL & CMOS
compatible
• Fast Page access cycle
• Refresh Modes: RAS-Only, CBR, and Hidden
Refresh
• 2098 refresh cycles distributed across 32ms
• 11/10 Addressing (Row/Column)
• Optimized for use in byte-write, non-parity appli-
cations.
-60
-70
tRAC
tCAC
tAA
RAS Access Time
CAS Access Time
60ns 70ns
15ns 20ns
Access Time From Address 30ns 35ns
tRC
Cycle Time
110ns 130ns
40ns 45ns
tHPC
EDO Mode Cycle Time
• Tin/lead versions only
• DRAMs in TSOP package
• High Performance CMOS process
• Manufactured with 16Mb DRAMS (2M x 8)
Description
The IBM11D2320H is an 8MB 72-pin 4-byte single
in-line memory module (SIMM). The module is orga-
nized as a 2Mx32 high speed memory array and is
configured as one 2Mx32 bank. The assembly is
intended for use in 16, 32 and 64 bit applications. It
is manufactured with four 2Mx8 devices, each in a
400mil TSOP pkg. and is compatible with applica-
tions that support 11/10 (Row/Column) addressing.
The use of TSOP packages allows tight SIMM spac-
ing (.3” on center).
The IBM 72-Pin SIMMs provide a high performance,
flexible 4-byte interface in a 4.25” long footprint.
Card Outline
1
36
37
72
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
75H1697
SA14-4338-01
Revised 6/96
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