I1B0M/1101,D51.03V6,0SEn1/MPbxM3M6DQSC2150D/1S0U,-50.001V0,2S1n6/2P0b.MIBMMD1S12E51D3S6U0E-010M10x231662Q0C. 1IB0M/1101, E52.03V6,0AEu2MMMxD3S62Q5DCS10U/-1000,150.201V6, 2A0u. MMDS25DSU-001021620. IBM11D2360E2M x 36 QC
IBM11D1360E IBM11D2360E
IBM11E1360E IBM11E2360E
1M/2M x 36 DRAM Module
Features
• 72-Pin Single-In-Line Memory Module
• Performance:
• High Performance CMOS process
• Single 5V, ± 0.5V Power Supply
• All inputs & outputs are fully TTL & CMOS
compatible
-60
-70
• Low active current dissipation
• Fast Page Mode access cycle
• Refresh Modes: RAS-Only, CBR, and Hidden
Refresh
• 1024 refresh cycles distributed across 16ms
• 10/10 Addressing (Row/Column)
• Optimized for use in byte-write parity
applications
tRAC
RAS Access Time
CAS Access Time
60ns 70ns
15ns 18ns
tCAC
tAA
Access Time From Address 30ns 35ns
tRC
Cycle Time
110ns 130ns
tPC
Fast Page Mode Cycle Time 40ns 45ns
• Gold and tin/lead tab versions available
• DRAMs in SOJ Package
Description
The IBM11D2360E is an 8MB 72-pin 4-byte single
in-line memory module (SIMM). The module is orga-
nized as a 2Mx36 high speed memory array, and is
configured as two 1Mx36 banks - each indepen-
dently selectable via unique RAS inputs. The
assembly is intended for use in 36 and 72 bit appli-
cations where interleave of 9 or 18 bit words is not
required. It is manufactured with sixteen 1Mx4
devices, each in a 300mil package, and two 1Mx4
‘Quad CAS’ devices for parity. The use of ‘Quad
CAS’ devices results in reduced SIMM height and
lower power dissipation.
The IBM11D1360E is a 4MB half populated version,
manufactured with eight 1Mx4 devices and one
1Mx4 ‘Quad CAS’ device.
The IBM 72-Pin SIMMs provide a high performance,
flexible 4-byte interface in a 4.25” long footprint.
Related products include the 2Mx32 non-parity
SIMM, IBM11D2320B, as well as other density offer-
ings and ECC-optimized SIMMs.
Card Outline
36 37
72
1
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H7977
SA14-4332-02
Revised 6/96
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