IBM11D1320B1M
x 3210/10, 5.0V, Sn/PbMMDS16DSU-001021720. IBM11D2320B2M x 3210/10, 5.0V, Sn/PbMMDS16DSU-001021720.
IBM11D1320B IBM11D2320B
1M/2M x 32 DRAM Module
Features
• 72-Pin JEDEC Standard Single-In-Line
Memory Module
• Performance:
• High Performance CMOS process
• Single 5V, ± 0.5V Power Supply
• Low active current dissipation
• All inputs & outputs are fully TTL & CMOS
compatible
-60
-70
• Fast Page Mode access cycle
• Refresh Modes: RAS-Only, CBR and Hidden
Refresh
• 1024 refresh cycles distributed across 16ms
• 10/10 Addressing (Row/Column)
• Optimized for use in byte-write non-parity appli-
cations.
tRAC
tCAC
tAA
RAS Access Time
CAS Access Time
60ns 70ns
15ns 18ns
Access Time From Address 30ns 35ns
tRC
Cycle Time
110ns 130ns
• Available in tin/lead tabs.
• DRAMs in SOJ Package
tPC
Fast Page Mode Cycle Time 40ns 40ns
Description
The IBM11D2320B is an 8MB industry standard
72-pin 4-byte single in-line memory module (SIMM).
The module is organized as a 2Mx32 high speed
memory array, and is configured as two 1Mx32
banks -each independently selectable via unique
RAS inputs. The assembly is intended for use in 16,
32 and 64 bit applications. It is manufactured with
sixteen 1Mx4 devices, each in a 300mil package,
and is compatible with the JEDEC 72-Pin SIMM
standard.
The IBM11D1320B is a 4MB half populated version,
manufactured with eight 1Mx4 devices.
The IBM 72-Pin SIMMs provide a high performance,
flexible 4-byte interface in a 4.25” long footprint.
Related products include the 2Mx36 parity SIMM,
IBM11D2360B, as well as other density offerings
and ECC-optimized SIMMs.
Card Outline
1
36
37
72
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H7976
SA14-4333-02
Revised 6/96
Page 1 of 20
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