.
IBM0118165 IBM0118165M
IBM0118165B IBM0118165P
1M x 16 10/10 EDO DRAM
Features
• Low Power Dissipation
• 1,048,576 word by 16 bit organization
- Active (max) - 185 mA / 165 mA / 140 mA
- Standby: TTL Inputs (max) - 1.0 mA
- Standby: CMOS Inputs (max)
- 1.0 mA (SP version)
• Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply
• Standard Power (SP) and Low Power (LP)
- 0.2 mA (LP version)
- Self Refresh (LP version only)
- 200µA (3.3 Volt)
• 1024 Refresh Cycles
- 16 ms Refresh Rate (SP version)
- 128 ms Refresh Rate (LP version)
- 300µA (5.0 Volt)
• High Performance:
• Extended Data Out (Hyper Page) Mode
• Dual CAS Byte Read/Write
• Read-Modify-Write
-50 -60 -6R -70 Units
tRAC
tCAC
tAA
RAS Access Time
CAS Access Time
50 60 60 70
13 15 17 20
ns
ns
ns
• RAS Only and CAS before RAS Refresh
• Hidden Refresh
Column Address Access Time 25 30 30 35
tRC
Cycle Time
84 104 104 124 ns
20 25 25 30 ns
EDO (Hyper Page) Mode
Cycle Time
• Package: TSOP-II 50/44 (400milx825mil)
SOJ 42/42 (400mil)
tHPC
Description
vide high performance, low power dissipation, and
high reliability. The devices operate with a single
3.3V ± 0.3V or 5.0V ± 0.5V power supply. The 20
addresses required to access any bit of data are
multiplexed (10 are strobed with RAS, 10 are
strobed with CAS).
The IBM0118165 is a dynamic RAM organized
1,048,576 words by 16 bits, which has a very low
“sleep mode” power consumption option. These
devices are fabricated in IBM’s advanced 0.5µm
CMOS silicon gate process technology. The circuit
and process have been carefully designed to pro-
Pin Assignments (Top View)
Pin Description
RAS
LCAS / UCAS
WE
Row Address Strobe
L/U Column Address Strobe
Read/Write Input
Address Inputs
50/44 TSOP
42/42 SOJ
VCC
IO0
IO1
IO2
IO3
VCC
IO4
IO5
IO6
IO7
NC
1
50
VSS
VCC
IO0
IO1
IO2
IO3
VCC
IO4
IO5
IO6
IO7
1
2
3
4
5
6
7
8
42
VSS
2
3
4
5
49 IO15
48 IO14
47 IO13
46 IO12
41 IO15
40 IO14
39 IO13
38 IO12
A0 - A9
OE
Output Enable
6
7
8
9
10
11
45
VSS
37
VSS
44 IO11
43 IO10
42 IO9
41 IO8
40 NC
36 IO11
35 IO10
34 IO9
I/O0 - I/O15
VCC
Data Input/Output
Power (+3.3V or +5.0V)
Ground
9
33
32 NC
IO8
10
11
VSS
NC
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
15
16
17
18
19
20
21
22
23
36 NC
35 LCAS
34 UCAS
33 OE
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
NC
WE
RAS
NC
NC
A0
12
13
14
15
16
17
18
19
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
A1
A2
25 A6
24 A5
A3
VCC
20
21
23 A4
24
25
22
VSS
26
VSS
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
28H4721
SA14-4223-04
Revised 11/96
Page 1 of 30
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