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IBM0117805T3-50 参数 Datasheet PDF下载

IBM0117805T3-50图片预览
型号: IBM0117805T3-50
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 X 0.725 INCH, TSOP2-28]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 31 页 / 373 K
品牌: IBM [ IBM ]
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Discontinued (9/98 - last order; 3/99 last ship)  
IBM01178052M  
x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO.  
IBM0117805 IBM0117805M  
IBM0117805B IBM0117805P  
2M x 8 11/10 EDO DRAM  
Features  
• Low Power Dissipation  
• 2,097,152 word by 8 bit organization  
- Active (max) - 75 mA / 60 mA  
- Standby: TTL Inputs (max) - 1.0 mA  
- Standby: CMOS Inputs (max)  
- 1.0 mA (SP version)  
• Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply  
• Standard Power (SP) and Low Power (LP)  
- 0.1 mA (LP version)  
- Self Refresh (LP version only)  
- 200µA (3.3 Volt)  
• 2048 Refresh Cycles  
- 32 ms Refresh Rate (SP version)  
- 128 ms Refresh Rate (LP version)  
- 300µA (5.0 Volt)  
• High Performance:  
• Extended Data Out (Hyper Page) Mode  
• Read-Modify-Write  
-50 -60 Units  
tRAC  
tCAC  
tAA  
RAS Access Time  
CAS Access Time  
Column Address Access Time  
Cycle Time  
50  
13  
25  
84  
60  
15  
ns  
ns  
ns  
ns  
ns  
• RAS Only and CAS before RAS Refresh  
• Hidden Refresh  
30  
tRC  
104  
25  
• Package: TSOP-II 28 (400mil x 725mil)  
SOJ 28 (300mil)  
tHPC  
EDO (Hyper Page) Mode Cycle Time 20  
Description  
The IBM0117805 is a dynamic RAM organized  
2,097,152 words by 8 bits, which has a very low  
“sleep mode” power consumption option. These  
devices are fabricated in IBM’s advanced 0.5µm  
CMOS silicon gate process technology. The circuit  
and process have been carefully designed to pro-  
vide high performance, low power dissipation, and  
high reliability. The devices operate with a single  
3.3V ± 0.3V or 5.0V ± 0.5V power supply. The 21  
addresses required to access any bit of data are  
multiplexed (11 are strobed with RAS, 10 are  
strobed with CAS).  
Pin Assignments (Top View)  
Pin Description  
RAS  
CAS  
Row Address Strobe  
Column Address Strobe  
Read/Write Input  
Address Inputs  
1
2
3
4
5
6
7
28  
27  
26  
25  
24  
Vcc  
I/O0  
I/O1  
I/O2  
I/O3  
WE  
RAS  
NC  
A10  
A0  
A1  
A2  
A3  
Vss  
I/O7  
I/O6  
I/O5  
I/O4  
CAS  
OE  
A9  
A8  
A7  
A6  
A5  
WE  
A0 - A10  
OE  
Output Enable  
I/O0 - I/O7  
VCC  
Data Input/Output  
Power (+3.3V or +5.0V)  
Ground  
23  
22  
21  
20  
19  
8
9
VSS  
10  
11  
12  
13  
14  
18  
17  
16  
15  
A4  
Vss  
Vcc  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
28H4724  
SA14-4221-06  
Revised 4/97