欢迎访问ic37.com |
会员登录 免费注册
发布采购

IBM0117800PT3-60 参数 Datasheet PDF下载

IBM0117800PT3-60图片预览
型号: IBM0117800PT3-60
PDF下载: 下载PDF文件 查看货源
内容描述: [Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 X 0.725 INCH, TSOP2-28]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 27 页 / 307 K
品牌: IBM [ IBM ]
 浏览型号IBM0117800PT3-60的Datasheet PDF文件第2页浏览型号IBM0117800PT3-60的Datasheet PDF文件第3页浏览型号IBM0117800PT3-60的Datasheet PDF文件第4页浏览型号IBM0117800PT3-60的Datasheet PDF文件第5页浏览型号IBM0117800PT3-60的Datasheet PDF文件第6页浏览型号IBM0117800PT3-60的Datasheet PDF文件第7页浏览型号IBM0117800PT3-60的Datasheet PDF文件第8页浏览型号IBM0117800PT3-60的Datasheet PDF文件第9页  
Discontinued (9/98 - last order; 3/99 last ship)  
IBM0117800 2M  
x 811/10, 5.0VMMDD33DSU-011011128. IBM0117800P2M x 811/10, 3.3V, LP, SRMMDD33DSU-011011128. IBM0117800M 2M x 811/10, 5.0V, LP, SRMMDD33DSU-011011128. IBM0117800B2M x 811/10, 3.3VMMDD33DSU-011011128.  
IBM0117800 IBM0117800M  
IBM0117800B IBM0117800P  
2M x 8 11/10 DRAM  
Features  
• Low Power Dissipation  
• 2,097,152 word by 8 bit organization  
- Active (max) - 70 mA / 60 mA  
- Standby: TTL Inputs (max) - 2.0 mA  
- Standby: CMOS Inputs (max)  
- 1.0 mA (SP version)  
• Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply  
• Standard Power (SP) and Low Power (LP)  
- 0.1 mA (LP version)  
- Self Refresh (LP version only)  
- 200µA (3.3 Volt)  
• 2048 Refresh Cycles  
- 32 ms Refresh Rate (SP version)  
- 128 ms Refresh Rate (LP version)  
- 300µA (5.0 Volt)  
• High Performance:  
• Fast Page Mode  
-50  
50  
13  
25  
95  
35  
-60  
60  
Units  
ns  
• Read-Modify-Write  
tRAC  
tCAC  
tAA  
RAS Access Time  
• RAS Only and CAS before RAS Refresh  
• Hidden Refresh  
CAS Access Time  
15  
ns  
Column Address Access Time  
Cycle Time  
30  
ns  
• Package: TSOP-II 28 (400mil x 725mil)  
SOJ 28 (300mil)  
tRC  
110  
40  
ns  
tPC  
Fast Page Mode Cycle Time  
ns  
Description  
vide high performance, low power dissipation, and  
high reliability. The devices operate with a single  
3.3V ± 0.3V or 5.0V ± 0.5V power supply. The 21  
addresses required to access any bit of data are  
multiplexed (11 are strobed with RAS, 10 are  
strobed with CAS).  
The IBM0117800 is a dynamic RAM organized  
2,097,152 words by 8 bits, which has a very low  
“sleep mode” power consumption option. These  
devices are fabricated in IBM’s advanced 0.5µm  
CMOS silicon gate process technology. The circuit  
and process have been carefully designed to pro-  
Pin Assignments (Top View)  
Pin Description  
RAS  
CAS  
Row Address Strobe  
Column Address Strobe  
Read/Write Input  
Address Inputs  
1
2
3
4
5
6
7
28  
27  
26  
25  
24  
Vcc  
I/O0  
I/O1  
I/O2  
I/O3  
WE  
RAS  
NC  
A10  
A0  
A1  
A2  
A3  
Vss  
I/O7  
I/O6  
I/O5  
I/O4  
CAS  
OE  
A9  
A8  
A7  
A6  
A5  
WE  
A0 - A10  
OE  
Output Enable  
I/O0 - I/O7  
VCC  
Data Input/Output  
Power (+3.3V or +5.0V)  
Ground  
23  
22  
21  
20  
19  
8
9
VSS  
10  
11  
12  
13  
14  
18  
17  
16  
15  
A4  
Vss  
Vcc  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
43G9629  
SA14-4205-07  
Revised 4/97