欢迎访问ic37.com |
会员登录 免费注册
发布采购

IBM0117405PJ1-60 参数 Datasheet PDF下载

IBM0117405PJ1-60图片预览
型号: IBM0117405PJ1-60
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 X 0.675 INCH, TSOJ-26/24]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 31 页 / 372 K
品牌: IBM [ IBM ]
 浏览型号IBM0117405PJ1-60的Datasheet PDF文件第2页浏览型号IBM0117405PJ1-60的Datasheet PDF文件第3页浏览型号IBM0117405PJ1-60的Datasheet PDF文件第4页浏览型号IBM0117405PJ1-60的Datasheet PDF文件第5页浏览型号IBM0117405PJ1-60的Datasheet PDF文件第6页浏览型号IBM0117405PJ1-60的Datasheet PDF文件第7页浏览型号IBM0117405PJ1-60的Datasheet PDF文件第8页浏览型号IBM0117405PJ1-60的Datasheet PDF文件第9页  
Discontinued (9/98 - last order; 3/99 last ship)  
IBM01174054M  
x 411/11, 5.0V, EDOMMDD64DSU-001012331. IBM0117405P4M x 411/11, 3.3V, EDO, LP, SRMMDD64DSU-001012331. IBM0117405M4M x 411/11, 5.0V, EDO, LP, SRMMDD64DSU-001012331. IBM0117405B4M x 411/11, 3.3V, EDOMMDD64DSU-001012331.  
IBM0117405 IBM0117405M  
IBM0117405B IBM0117405P  
4M x 4 11/11 EDO DRAM  
Features  
• Low Power Dissipation  
• 4,194,304 word by 4 bit organization  
- Active (max) - 75 mA / 60 mA  
- Standby: TTL Inputs (max) - 1.0 mA  
- Standby: CMOS Inputs (max)  
- 1.0 mA (SP version)  
• Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply  
• Standard Power (SP) and Low Power (LP)  
- 0.1 mA (LP version)  
- Self Refresh (LP version only)  
- 200µA (3.3 Volt)  
• 2048 Refresh Cycles  
- 32 ms Refresh Rate (SP version)  
- 128 ms Refresh Rate (LP version)  
- 300µA (5.0 Volt)  
• High Performance:  
• Extended Data Out (Hyper Page) Mode  
• Read-Modify-Write  
-50  
50  
13  
25  
84  
20  
-60 Units  
tRAC  
tCAC  
tAA  
RAS Access Time  
60  
15  
ns  
ns  
ns  
ns  
ns  
• RAS Only and CAS before RAS Refresh  
• Hidden Refresh  
CAS Access Time  
Column Address Access Time  
Cycle Time  
30  
tRC  
104  
25  
• Package: SOJ 26/24 (300mil x 675mil)  
TSOP-26/24 (300mil x 675mil)  
tHPC  
EDO (Hyper Page) Mode Cycle Time  
Description  
vide high performance, low power dissipation, and  
high reliability. The devices operate with a single  
3.3V ± 0.3V or 5.0V ± 0.5V power supply. The 22  
addresses required to access any bit of data are  
multiplexed (11 are strobed with RAS, 11 are  
strobed with CAS).  
The IBM0117405 is a dynamic RAM organized  
4,194,304 words by 4 bits, which has a very low  
“sleep mode” power consumption option. These  
devices are fabricated in IBM’s advanced 0.5µm  
CMOS silicon gate process technology. The circuit  
and process have been carefully designed to pro-  
Pin Assignments (Top View)  
Pin Description  
RAS  
CAS  
Row Address Strobe  
Column Address Strobe  
Read/Write Input  
Address Inputs  
Vcc  
I/O0  
I/O1  
WE  
RAS  
NC  
1
2
3
4
5
6
26  
25  
24  
23  
22  
21  
Vss  
I/O3  
I/O2  
CAS  
OE  
WE  
A0 - A10  
OE  
Output Enable  
I/O0 - I/O3  
VCC  
Data Input/Output  
Power (+3.3V or +5.0V)  
Ground  
A9  
VSS  
A10  
A0  
A1  
A2  
A3  
8
9
19  
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
Vss  
10  
11  
12  
13  
Vcc  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
28H4726  
SA14-4228-05  
Revised 4/97