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IBM0116400MT1-60 参数 Datasheet PDF下载

IBM0116400MT1-60图片预览
型号: IBM0116400MT1-60
PDF下载: 下载PDF文件 查看货源
内容描述: [Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 X 0.675 INCH, TSOP-26/24]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 28 页 / 288 K
品牌: IBM [ IBM ]
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IBM01164004M  
x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V.  
IBM0116400 IBM0116400M  
IBM0116400B IBM0116400P  
4M x 4 12/10 DRAM  
Features  
• Low Power Dissipation  
• 4,194,304 word by 4 bit organization  
- Active (max) - 85 mA / 75 mA / 65 mA  
- Standby: TTL Inputs (max) - 2.0 mA  
- Standby: CMOS Inputs (max)  
- 1.0 mA (SP version)  
• Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply  
• Standard Power (SP) and Low Power (LP)  
- 0.2 mA (LP version)  
- Self Refresh (LP version only)  
- 200µA (3.3 Volt)  
• 4096 Refresh Cycles  
- 64 ms Refresh Rate (SP version)  
- 256 ms Refresh Rate (LP version)  
- 300µA (5.0 Volt)  
• High Performance:  
• Read-Modify-Write  
-50  
-60  
-70  
• RAS Only and CAS before RAS Refresh  
• Hidden Refresh  
tRAC  
tCAC  
tAA  
RAS Access Time  
50ns  
13ns  
25ns  
60ns  
15ns  
30ns  
70ns  
20ns  
35ns  
CAS Access Time  
• Package: SOJ-28/24 (400milx725mil)  
SOJ-26/24 (300milx675mil)  
Column Address Access Time  
Cycle Time  
tRC  
95ns 110ns 130ns  
35ns 40ns 45ns  
TSOP-26/24 (300milx675mil)  
tPC  
Fast Page Mode Cycle Time  
Description  
vide high performance, low power dissipation, and  
high reliability. The devices operate with a single  
3.3V ± 0.3V or 5.0V ± 0.5V power supply. The 22  
addresses required to access any bit of data are  
multiplexed (12 are strobed with RAS, 10 are  
strobed with CAS).  
The IBM0116400 is a dynamic RAM organized  
4,194,304 words by 4 bits, which has a very low  
“sleep mode” power consumption option. These  
devices are fabricated in IBM’s advanced 0.5µm  
CMOS silicon gate process technology. The circuit  
and process have been carefully designed to pro-  
Pin Assignments (Top View)  
Pin Description  
RAS  
CAS  
Row Address Strobe  
Column Address Strobe  
Read/Write Input  
Address Inputs  
28/24  
26/24  
WE  
Vcc  
I/O0  
I/O1  
WE  
RAS  
A11  
1
2
3
4
5
6
28  
27  
26  
25  
24  
23  
Vss  
I/O3  
I/O2  
CAS  
OE  
Vcc  
I/O0  
I/O1  
WE  
RAS  
A11  
1
2
3
4
5
6
26  
25  
24  
23  
22  
21  
Vss  
I/O3  
I/O2  
CAS  
OE  
A0 - A11  
OE  
Output Enable  
I/O0 - I/O3  
VCC  
Data Input/Output  
Power (+3.3V or +5.0V)  
Ground  
A9  
A9  
VSS  
A10  
A0  
A1  
A2  
A3  
9
10  
11  
12  
13  
14  
A10  
A0  
A1  
A2  
A3  
8
9
10  
11  
12  
13  
20  
19  
18  
17  
16  
15  
A8  
A7  
A6  
A5  
A4  
Vss  
19  
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
Vss  
Vcc  
Vcc  
©IBM Corporation, 1996. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
43G9396  
SA14-4203-04  
Revised 11/96  
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