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IBM0116165MJ3-50 参数 Datasheet PDF下载

IBM0116165MJ3-50图片预览
型号: IBM0116165MJ3-50
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 31 页 / 377 K
品牌: IBM [ IBM ]
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Discontinued (9/98 - last order; 3/99 last ship)  
IBM01161651M  
x 1612/8, 5.0V, EDOMMDD61DSU-001015031. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165B1M x 1612/8, 3.3V, EDOMMDD61DSU-001015031.  
IBM0116165 IBM0116165M  
IBM0116165B IBM0116165P  
1M x 16 12/8 EDO DRAM  
Features  
• Low Power Dissipation  
• 1,048,576 word by 16 bit organization  
- Active (max) - 55 mA / 50 mA  
- Standby: TTL Inputs (max) - 1.0 mA  
- Standby: CMOS Inputs (max)  
- 1.0 mA (SP version)  
• Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply  
• Standard Power (SP) and Low Power (LP)  
- 0.1 mA (LP version)  
- Self Refresh (LP version only)  
- 200µA (3.3 Volt)  
• 4096 Refresh Cycles  
- 64 ms Refresh Rate (SP version)  
- 256 ms Refresh Rate (LP version)  
- 300µA (5.0 Volt)  
• High Performance:  
• Extended Data Out (Hyper Page) Mode  
• Dual CAS Byte Read/Write  
• Read-Modify-Write  
-50 -60 Units  
tRAC  
tCAC  
tAA  
RAS Access Time  
CAS Access Time  
Column Address Access Time  
Cycle Time  
50  
13  
25  
60  
15  
30  
ns  
ns  
ns  
ns  
ns  
• RAS Only and CAS before RAS Refresh  
• Hidden Refresh  
tRC  
84 104  
25  
tHPC  
EDO (Hyper Page) Mode Cycle Time 20  
• Package: TSOP-II 50/44 (400mil x 825mil)  
SOJ 42/42 (400mil)  
Description  
vide high performance, low power dissipation, and  
high reliability. The devices operate with a single  
3.3V ± 0.3V or 5.0V ± 0.5V power supply. The 20  
addresses required to access any bit of data are  
multiplexed (12 are strobed with RAS, 8 are strobed  
with CAS).  
The IBM0116165 is a dynamic RAM organized  
1,048,576 words by 16 bits, which has a very low  
“sleep mode” power consumption option. These  
devices are fabricated in IBM’s advanced 0.5µm  
CMOS silicon gate process technology. The circuit  
and process have been carefully designed to pro-  
Pin Assignments (Top View)  
Pin Description  
RAS  
LCAS / UCAS  
WE  
Row Address Strobe  
L/U Column Address Strobe  
Read/Write Input  
Address Inputs  
50/44 TSOP  
42/42 SOJ  
VCC  
IO0  
IO1  
IO2  
IO3  
VCC  
IO4  
IO5  
IO6  
IO7  
NC  
1
50  
VSS  
VCC  
IO0  
IO1  
IO2  
IO3  
VCC  
IO4  
IO5  
IO6  
IO7  
1
2
3
4
5
6
7
8
42  
VSS  
2
3
4
5
49 IO15  
48 IO14  
47 IO13  
46 IO12  
41 IO15  
40 IO14  
39 IO13  
38 IO12  
A0 - A11  
OE  
Output Enable  
6
7
8
9
10  
11  
45  
VSS  
37  
VSS  
44 IO11  
43 IO10  
42 IO9  
41 IO8  
40 NC  
36 IO11  
35 IO10  
34 IO9  
I/O0 - I/O15  
VCC  
Data Input/Output  
Power (+3.3V or +5.0V)  
Ground  
9
33  
32 NC  
IO8  
10  
11  
VSS  
NC  
NC  
NC  
WE  
RAS  
A11 19  
A10  
A0  
A1  
A2  
A3  
15  
16  
17  
18  
36 NC  
35 LCAS  
34 UCAS  
33 OE  
32 A9  
31 A8  
30 A7  
29 A6  
28 A5  
27 A4  
NC  
WE  
RAS  
A11 15  
A10  
A0  
12  
13  
14  
31 LCAS  
30 UCAS  
29 OE  
28 A9  
27 A8  
26 A7  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
A1  
A2  
25 A6  
24 A5  
A3  
VCC  
20  
21  
23 A4  
22  
VSS  
VCC  
26  
VSS  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
28H4723  
SA14-4225-06  
Revised 4/97