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ES29DL800ET-90TGI 参数 Datasheet PDF下载

ES29DL800ET-90TGI图片预览
型号: ES29DL800ET-90TGI
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2M ×8 / 1M ×16 )的CMOS 3.0伏只,引导扇区闪存 [16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 53 页 / 700 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
DEVICE BUS OPERATIONS  
on the device address inputs produce valid data on  
the device data outputs. The device stays at the read  
mode until another operation is activated by writing  
commands into the internal command register. Refer  
to the AC read cycle timing diagrams for further  
details ( Fig. 16 ).  
Several device operational modes are provided in  
the ES29LV160 device. Commands are used to ini-  
tiate the device operations. They are latched and  
stored into internal registers with the address and  
data information needed to execute the device  
operation.  
The available device operational modes are listed  
in Table 1 with the required inputs, controls, and the  
resulting outputs. Each operational mode is  
described in further detail in the following subsec-  
tions.  
Word/Byte Mode Configuration ( BYTE# )  
The device data output can be configured by BYTE#  
into one of two modes : word and byte modes. If the  
BYTE# pin is set at logic ‘1’, the device is configured  
in word mode, DQ0 - DQ15 are active and controlled  
by CE# and OE#. If the BYTE# pin is set at logic ‘0’,  
the device is configured in byte mode, and only data  
I/O pins DQ0 - DQ7 are active and controlled by CE#  
and OE#. The data I/O pins DQ8 - DQ14 are tri-  
stated, and the DQ15 pin is used as an input for the  
LSB (A-1) address.  
Read  
The internal state of the device is set for the read  
mode and the device is ready for reading array data  
upon device power-up, or after a hardware reset. To  
read the stored data from the cell array of the  
device, CE# and OE# pins should be driven to V  
IL  
Standby Mode  
while WE# pin remains at V . CE# is the power  
IH  
control and selects the device. OE# is the output  
control and gates array data to the output pins.  
When the device is not selected or activated in a  
system, it needs to stay at the standby mode, in  
which current consumption is greatly reduced with  
outputs in the high impedance state.  
Word or byte mode of output data is determined by  
the BYTE# pin. No additional command is needed  
in this mode to obtain array data. Standard micro-  
processor read cycles that assert valid addresses  
6
Rev. 0B January 5 , 2006  
ES29LV160E