EPA160B-100P
UPDATED 05/05/2006
High Efficiency Heterojunction Power FET
•
•
•
•
•
•
NON-HERMETIC 100MIL METAL FLANGE PACKAGE
+31.0dBm TYPICAL OUTPUT POWER
10dB TYPICAL POWER GAIN AT 12GHz
0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY AND HIGH RELIABILITY
G
D
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 12GHz
Vds=8V, Ids=50% Idss
f= 18GHz
Gain at 1dB Compression
f= 12GHz
Vds=8V, Ids=50% Idss
f= 18GHz
Power Added Efficiency at 1dB Compression
Vds=8 V, Ids=50% Idss
f=12GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=4.5mA
Igd=1.6mA
Igs=1.6mA
-13
-7
MIN
29.0
8.5
TYP
31.0
31.0
10.0
5.0
41
290
320
480
500
-1.0
-15
-14
35*
-2.5
660
MAX
UNIT
dBm
dB
%
mA
mS
V
V
V
ºC/W
Thermal Resistance (Au-Sn Eutectic Attach)
Note:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-5V
7.2 mA
-1.2 mA
28 dBm
175
o
C
-65/175
o
C
4.0 W
CONTINUOUS
2
8V
-3V
2.4 mA
-0.4 mA
@ 3dB Compression
175
o
C
-65/175
o
C
4.0 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised May 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
