EPA030D
UPDATED 11/30/2004
High Performance Heterojunction Dual-Gate FET
MAXIMUM RATINGS AT 25OC
SYMBOL
PARAMETERS
ABSOLUTE1
CONTINUOURS2
VDS
VGS
IDS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
10 V
-6 V
7 V
-3.5 V
Idss
Idss
IGSF
PIN
Forward Gate Current
Input Power
15 mA
15 dBm
1.1 W
2.5 mA
@ 3dB compression
900 mW
PT
Total Power Dissipation
Channel Temperature
Storage Temperature
TCH
TSTG
175°C
-65/+175°C
150°C
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
S-PARAMETERS
6V, 1/2 Idss, Vg2s=0V
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1
2
0.991 -15.1 9.329 165.6 0.006 80.8 0.943 -5.5
0.965 -30.1 9.120 152.7 0.010 74.8 0.932 -11.2
0.937 -45.3 8.850 139.8 0.015 62.0 0.912 -16.4
0.897 -59.8 8.553 127.4 0.019 55.7 0.891 -21.6
0.854 -74.1 8.208 115.3 0.021 47.7 0.868 -26.5
0.818 -86.2 7.758 104.8 0.022 43.8 0.854 -30.7
0.786 -97.4 7.369 94.9 0.024 37.6 0.840 -34.5
0.753 -109.1 7.016 84.8 0.024 31.8 0.828 -38.7
0.726 -119.9 6.697 75.2 0.024 26.7 0.817 -42.8
0.699 -130.5 6.409 65.5 0.021 24.0 0.814 -47.2
0.688 -141.1 6.173 56.1 0.020 16.5 0.820 -52.1
0.687 -150.3 5.952 46.6 0.019 11.4 0.823 -58.0
0.684 -160.2 5.720 36.8 0.019 6.6 0.840 -64.0
0.687 -169.4 5.499 27.0 0.015 4.7 0.860 -70.1
0.688 -176.6 5.298 18.1 0.013 15.1 0.879 -76.8
0.715 176.6 5.189 8.0 0.012 13.4 0.923 -82.9
0.731 169.4 4.994 -2.0 0.012 14.7 0.960 -89.6
0.745 163.5 4.850 -11.6 0.012 20.0 0.995 -95.5
0.774 156.6 4.705 -21.7 0.011 35.6 1.025 -101.1
0.764 151.0 4.571 -31.0 0.012 42.3 1.093 -106.3
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
0.758 144.0 4.807 -38.8 0.014 65.7 1.161 -107.6
0.786 138.7 4.797 -49.7 0.019 65.4 1.233 -114.5
0.809 134.2 4.809 -61.7 0.024 80.1 1.339 -122.8
0.838 130.0 4.793 -75.3 0.029 82.1 1.437 -133.4
0.875 126.4 4.749 -90.2 0.038 83.2 1.520 -144.3
0.907 123.2 4.604 -106.9 0.049 77.8 1.664 -158.3
0.932 119.3 4.423 -125.2 0.061 71.4 1.720 -173.9
0.960 114.9 4.008 -144.6 0.067 62.3 1.688 171.4
0.968 111.1 3.527 -163.4 0.071 53.8 1.638 158.6
0.952 107.2 3.016 179.0 0.072 45.5 1.555 147.2
0.947 103.2 2.587 162.1 0.072 39.9 1.433 137.9
0.944 99.6 2.198 145.5 0.074 35.2 1.317 129.4
0.951 95.6 1.920 129.5 0.077 32.7 1.227 123.7
0.942 92.4 1.619 114.1 0.073 24.8 1.123 117.7
0.959 87.8 1.412 98.9 0.075 19.7 1.033 113.6
0.968 83.2 1.235 85.2 0.076 10.5 0.966 111.9
0.976 79.3 1.067 72.1 0.076 2.2 0.893 109.9
0.989 76.4 0.936 61.0 0.069 -6.3 0.851 109.1
0.985 72.6 0.829 49.0 0.066 -15.8 0.803 108.9
0.991 71.5 0.714 38.8 0.056 -21.3 0.785 108.4
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Note:
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each., 2 gate2 wires(to ground), 7 mils each
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised December 2004
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
