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EPA018BV-70SC 参数 Datasheet PDF下载

EPA018BV-70SC图片预览
型号: EPA018BV-70SC
PDF下载: 下载PDF文件 查看货源
内容描述: 高效异质结功率FET [High Efficiency Heterojunction Power FET]
分类和应用:
文件页数/大小: 1 页 / 82 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
   
EPA018BV-70SC
ISSUED 01/31/2006
High Efficiency Heterojunction Power FET
FEATURES
None-Hermetic Low Cost Ceramic 70mil Package
+20.0 dBm Output Power at 1dB Compression
11.0 dB Power Gain at 18GHz
Typical 0.75 dB Noise Figure and
12.5 dB Associated Gain at 12GHz
0.3 x 180 Micron Recessed “Mushroom” Gate
Si
3
N
4
Passivation
Advanced Epitaxial Heterojunction Profile Provides
Extra High Power Efficiency, and High Reliability
Caution! ESD sensitive device.
MIN
18.5
12.0
TYP
20.0
20.0
14
12
45
0.75
12.5
40
35
-9
-6
2.5
55
60
-1.0
-15
-14
480*
f = 24GHz
o
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
NF
GA
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
|S
21
|
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 12GHz
f = 18GHz
V
DS
= 6V, I
DS
50% I
DSS
Gain at 1dB Compression
f = 12GHz
f = 18GHz
V
DS
= 6V, I
DS
50% I
DSS
Power Added Efficiency at 1dB Compression
f = 12GHz
V
DS
= 6V, I
DS
50% I
DSS
Noise Figure V
DS
= 2V, I
DS
= 15mA
f = 12GHz
Associate Gain V
DS
= 2V, I
DS
= 15mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
Insersion Gain in dB
V
DS
= 6V, I
DS
50% I
DSS
f = 12GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 1.0 mA
I
GD
= 1.0mA
I
GS
= 1.0mA
MAX
UNITS
dBm
dB
%
dB
dB
90
-2.5
mA
mS
V
V
V
C/W
dB
Notes:
*
Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL
V
DS
V
GS
I
DS
I
GSF
P
IN
P
T
T
CH
T
STG
1.
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
VALUE
6V
-3 V
40 mA
1.5 mA
@ 3dB compression
240 mW
150°C
-65/+150°C
2.
Exceeding any of the above ratings may result in permanent damage.
Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1of 1
Revised January 2006