EPA018B-70
ISSUED 11/01/2007
High Efficiency Heterojunction Power FET
FEATURES
•
•
•
•
Non-Hermetic Low Cost Ceramic 70mil Package
+20.0 dBm Output Power at 1dB Compression
11.0 dB Power Gain at 18GHz
Typical 0.75 dB Noise Figure and
12.5 dB Associated Gain at 12GHz
0.3 x 180 Micron Recessed “Mushroom” Gate
Si
3
N
4
Passivation
Advanced Epitaxial Heterojunction Profile Provides
Extra High Power Efficiency, and High Reliability
•
•
•
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
NF
GA
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
V
DS
= 6V, I
DS
≈
50% I
DSS
Gain at 1dB Compression
V
DS
= 6V, I
DS
≈
50% I
DSS
Power Added Efficiency at 1dB Compression
V
DS
= 6V, I
DS
≈
50% I
DSS
Noise Figure V
DS
= 2V, I
DS
= 15mA
Associate Gain V
DS
= 2V, I
DS
= 15mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
f = 12GHz
f = 18GHz
f = 12GHz
f =18GHz
f = 12GHz
f = 12GHz
f = 12GHz
Caution! ESD sensitive device.
MIN
18.5
11.0
TYP
20.0
20.0
13.5
11.0
45
0.75
12.5
30
35
-9
-6
55
60
-1.0
-15
-14
480*
o
MAX
UNITS
dBm
dB
%
dB
dB
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 1.0 mA
I
GD
= 1.0mA
I
GS
= 1.0mA
80
-2.5
mA
mS
V
V
V
C/W
Notes:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25°C
1,2
SYMBOL
V
DS
V
GS
I
DS
I
GSF
P
IN
P
T
T
CH
T
STG
1.
2.
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
ABSOLUTE
12 V
-6 V
Idss
9 mA
16 dBm
285 mW
175°C
-65/+175°C
1
CONTINUOUS
6V
-3 V
40 mA
1.5 mA
2
@ 3dB compression
240 mW
150°C
-65/+150°C
Exceeding any of the above ratings may result in permanent damage.
Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
