Excelics
DATA SHEET
EMA303D-2
Release Date: March 7, 2003
19.5 - 24 GHz Medium Power MMIC
FEATURES
•
•
•
•
•
•
•
19.5 -24 GHz BANDWIDTH
+22 dBm OUTPUT POWER @1dB Gain Compression
22 dB TYPICAL SMALL SIGNAL GAIN
DUAL BIAS SUPPLY
0.3 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS
1
(T
a
= 25
O
C)
SYMBOL
F
P
1dB
PARAMETERS/TEST CONDITIONS
Operating Frequency Range
Ouput Power at 1dB Gain Compression
@ Vdd=8V ; Id= 0.5 Idss
@ Vdd=6V ; Id= 0.5 Idss
Gss
∆
Gss
NF
Input RL
Output RL
Idd
Vdd
Small Signal Gain @ Vdd=6V ; Id= 0.5 Idss
Small Signal Gain Flatness
Noise Figure @ f=18GHz, Vdd=3.5V, Id=140mA
Input Return Loss
Output Return Loss
Power Supply Current
Power Supply Voltage
Chip Size 1060 x 2500 microns
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
MIN
19.5
TYP
MAX
24
UNIT
GHz
21.5
19.5
20
23
21
22
±
1.5
4
dBm
dB
dB
dB
dB
dB
9
8
140
6
8
mA
V
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-3V
Vgs
Drain Current
Idss
215mA
Ids
Forward Gate Current
50 mA
8.5mA
Igf
Input Power
15dBm
@3dB Compression
Pin
Channel Temperature
175
o
C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
1W
0.85 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
